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Improved III-V Antimonide-Based Superlattice Materials From Growth and Defect Modeling

Award Information
Agency: Department of Defense
Branch: Army
Contract: W909MY-17-C-0003
Agency Tracking Number: A2-6417
Amount: $999,998.66
Phase: Phase II
Program: SBIR
Solicitation Topic Code: A15-041
Solicitation Number: 2015.1
Timeline
Solicitation Year: 2015
Award Year: 2017
Award Start Date (Proposal Award Date): 2017-02-03
Award End Date (Contract End Date): 2019-06-03
Small Business Information
590 Territorial Drive, Suite H
Bolingbrook, IL 60440
United States
DUNS: 832072149
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr. Anthony Ciani
 Scientist
 (630) 226-0080
 contracts@sivananthanlabs.us
Business Contact
 Christoph Grein
Phone: (630) 226-0086
Email: cgrein@sivananthanlabs.us
Research Institution
N/A
Abstract

Absorber layers based on Type-II superlattices (T2SLs) composed of III-V compound semiconductors (e.g. InAs and InSb) are a promising sensor technology for infrared imaging; however, carrier lifetimes are often significantly shorter than expected, particularly in InAs/InAsSb LWIR T2SL designs that should provide high carrier lifetimes. There is strong evidence that the short lifetime results from Shockley-Read-Hall defects that are inactive in the bulk constituents. A combination of quantum mechanical calculations and molecular dynamics-based epitaxial growth simulations will be used to optimize T2SL growth strategies to maximize SRH lifetime. The most promising strategies identified from the simulation results will be tested by experiments that will assess the theoretical understanding and optimize a growth process based on the predictions. Technology transfer to a commercial T2SL material foundry will also take place.

* Information listed above is at the time of submission. *

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