HVPE-Based Gallium Oxide Homoepitaxial Structures for RF and Power Switching Devices

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-17-P-0012
Agency Tracking Number: F171-018-1360
Amount: $149,999.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: AF171-018
Solicitation Number: 2017.1
Timeline
Solicitation Year: 2017
Award Year: 2017
Award Start Date (Proposal Award Date): 2017-09-15
Award End Date (Contract End Date): 2018-06-14
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jacob Leach
 Chief Science Officer
 (919) 789-8880
 leach@kymatech.com
Business Contact
 Heather Splawn
Phone: (919) 789-8880
Email: contracts@kymatech.com
Research Institution
N/A
Abstract
Monoclinic -Ga2O3 has recently emerged as a promising material for ultrawide bandgap electronics for next-generation high voltage lateral and vertical power switching devices, thanks to its large bandgap (4.9eV), high critical breakdown field (8MV

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