Hardening Electronics to Electromagnetic Threats

Award Information
Agency:
Department of Defense
Branch
Defense Threat Reduction Agency
Amount:
$99,998.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
HDTRA1-10-P-0016
Agency Tracking Number:
T092-011-0076
Solicitation Year:
2009
Solicitation Topic Code:
DTRA092-011
Solicitation Number:
2009.2
Small Business Information
Ovonyx
2956 Waterview Drive, Rochester Hills, MI, 48309
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
164712544
Principal Investigator:
Wolodymyr Czubatyj
Director of Engineering
(248) 299-6002
wczubatyj@ovonyx.com
Business Contact:
Karen Connolly
Chief Financial Officer
(248) 842-6096
kconnolly@ovonyx.com
Research Institution:
n/a
Abstract
Electronic equipment, especially communication equipment, is extremely vulnerable to various forms of electromagnetic radiation whether natural or man-made due to minimal shielding and high sensitivity to radio waves. An ideal transient hardening device would limit the harmful energy as it enters the circuitry by minimizing the over-voltage. It would have to respond very fast and be able to handle very high currents. Ideally it would be a device on the integrated circuit itself. Chalcogenide switching devices have been shown to suppress EMP and HPM transients in the past as discrete devices. This proposal is the first step in developing a process for integrating such a device onto integrated circuits. Phase I will investigate electrodes, improved chalcogenide materials, and structures for threshold voltage levels and current handling capacity. In Phase II optimized devices will be tested at BAE Systems in electronic system configurations for improved transient suppression. Also, Ovonyx will develop a process compatible with typical CMOS back-end processes for integration into IC manufacturing processes, such as for BAE Systems’ radiation-hardened circuits and will demonstrate improved EMP protection levels.

* information listed above is at the time of submission.

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