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Electronic grade, single crystal or large-grain polycrystalline diamond wafer development.

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-18-C-0017
Agency Tracking Number: A2-7045
Amount: $998,556.75
Phase: Phase II
Program: SBIR
Solicitation Topic Code: A16-021
Solicitation Number: 16.1
Solicitation Year: 2016
Award Year: 2018
Award Start Date (Proposal Award Date): 2017-11-02
Award End Date (Contract End Date): 2020-04-30
Small Business Information
4715 Steiner Ranch Blvd
Austin, TX 78732
United States
DUNS: 071449319
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 William Holber
 (781) 856-3085
Business Contact
 William Holber
Phone: (781) 856-3085
Research Institution

The goal of the Phase II program is to demonstrate growth of large-area single-crystal diamond substrates having surface area of 6 cm2 and suitable for electronic device applications. This will represent a major leap in available substrate area, from less than 1 cm2 available today. The technical path will directly follow the work begun in the Phase I program, which is, using our toroidal plasma CVD diamond deposition reactor, start with a single crystal seed and grow a large bulk piece of material through growth in one direction first and then growth in a 90-degree direction subsequently. The finished piece of bulk material can then be laser trimmed and polished and used as a master seed to grow thin wafers with about 1 day of growth. Michigan State University (MSU), our university partner in this effort, will perform all post-bulk growth processing and analysis, including laser cutting, polishing, optical and electron microscopy, and characterization of free hole density, channel Hall mobility, thermal conductivity and surface roughness.

* Information listed above is at the time of submission. *

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