Radiation-defect mitigation in InAs/GaSb strained-layer superlattice infrared detectors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-18-C-7310
Agency Tracking Number: B2-2581
Amount: $974,448.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: MDA16-011
Solicitation Number: 2016.2
Timeline
Solicitation Year: 2016
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-04-30
Award End Date (Contract End Date): 2020-04-29
Small Business Information
1209 W. Gore St., Orlando, FL, 32805
DUNS: 080123658
HUBZone Owned: Y
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Chris Fredricksen
 (386) 631-7319
 cfredricksen@gmail.com
Business Contact
 Robert Peale
Phone: (407) 256-9884
Email: peale.truventicllc@gmail.com
Research Institution
N/A
Abstract
This Phase II SBIR project will advance the technical readiness level (TRL) of our Phase-I-demonstrated strategy for mitigating radiation damage in GaSb/InAs Type II Strained-Layer-Superlattice (SLS) long-wave infrared (LWIR) detectors.Our mitigation strategy will be optimized for detectors to be deployed in interceptor seeker systems that will be exposed to radiation in the near-Earth orbital environment.Optimization will be achieved by experiments on relevant hardware, using realistic operating and irradiation conditions, combined with investigations into the underlying physical phenomena.The mitigation treatment is purely electrical and will be applied in-situ, remotely, automatically, and in real-time.Mitigation will not increase eyes off target time for interceptor seeker imagers.Minority carrier diffusion length will be measured directly using Electron Beam Induced Current (EBIC) technique.Our mitigation treatment dramatically restores both photoresponse and minority carrier diffusion length.The final TRL resulting from the proposed Phase II will be at least 4, namely breadboard validation in a laboratory environment for proton-irradiated single-element detectors with ROIC-equivalent electronics.Approved for Public Release | 18-MDA-9522 (23 Feb 18)

* Information listed above is at the time of submission. *

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