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Hot Filament CVD technology for disruptive, high-throughput SiC epitaxial growth reactors

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-18-C-0329
Agency Tracking Number: N18A-004-0239
Amount: $124,999.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N18A-T004
Solicitation Number: 2018.0
Timeline
Solicitation Year: 2018
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-04-25
Award End Date (Contract End Date): 2018-10-26
Small Business Information
5345 Arapahoe Ave #1B, Boulder, CO, 80303
DUNS: 600999903
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 David Bobela
 (720) 982-8807
 dbobela@gmail.com
Business Contact
 Bart Zeghbroeck
Phone: (720) 352-9538
Email: bart@truenano.com
Research Institution
 University of Colorado
 Jessica Maass
 3100 Marine Street
Room 479
Boulder, CO, 80303
 (303) 735-6299
 Nonprofit college or university
Abstract
TrueNano, Inc. will in collaboration with the University of Colorado and industry partners, develop a novel single-wafer, high-throughput hot filament CDV reactor for the growth of high quality silicon carbide (SiC) epitaxial layers, suitable for the next generation of power electronic devices and systems. This includes the design and simulation of the reactor, the development of a throughput model, a growth model and cost model and the simulation of the reactor throughput and material uniformity. Filament reliability will be determined based on lifetime measurements and failure analysis. HFCVD material will be characterized extensively and used to demo a device with high breakdown field. This proposed technology will ultimately result in lower cost SiC materials, devices and systems, due to faster throughput, larger wafer size, and higher device yield, as desirable for a multitude of military and commercial applications.

* Information listed above is at the time of submission. *

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