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Development of Large Area GaN Substrates for Vertical Power Electronics
Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-18-C-0332
Agency Tracking Number: N18A-004-0247
Amount:
$124,997.00
Phase:
Phase I
Program:
STTR
Solicitation Topic Code:
N18A-T004
Solicitation Number:
18.A
Timeline
Solicitation Year:
2018
Award Year:
2018
Award Start Date (Proposal Award Date):
2018-04-25
Award End Date (Contract End Date):
2019-08-26
Small Business Information
8829 Midway West Road
Raleigh, NC
27617
United States
DUNS:
020080607
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Jacob Leach Jacob Leach
Title: Chief Science Officer
Phone: (919) 789-8880
Email: leach@kymatech.com
Title: Chief Science Officer
Phone: (919) 789-8880
Email: leach@kymatech.com
Business Contact
Name: Heather Splawn
Phone: (919) 789-8880
Email: contracts@kymatech.com
Phone: (919) 789-8880
Email: contracts@kymatech.com
Research Institution
Name: Sandia National Laboratories
Contact: Terrence L. Aselage Terrence L. Aselage
Address:
Phone: (505) 845-8027
Type: Federally Funded R&D Center (FFRDC)
Contact: Terrence L. Aselage Terrence L. Aselage
Address:
1515 Eubank SE
Albuquerque, NM
87123
United States
Phone: (505) 845-8027
Type: Federally Funded R&D Center (FFRDC)
Abstract
This program will further the development of large area freestanding GaN substrates (>100mm) and develop a bulk GaN substrate characterization protocol to help reduce the variability in GaN homoepitaxial growth results which have prevented low cost, high voltage, vertical GaN power devices from being realized in an economically viable way.
* Information listed above is at the time of submission. *
