SCHOTTKY BARRIER PHOTOELECTRODES WITH VARIABLE BARRIER HGHT

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$492,000.00
Award Year:
1984
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
121
Agency Tracking Number:
121
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
111 Chapel Street, Newton, MA, 02158
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
() -
Business Contact:
R. David Rauh
(617) 965-2710
Research Institute:
n/a
Abstract
THE OBJECTIVE OF THIS RESEARCH IS TO INVESTIGATE THE PROPERTIES OF SCHOTTKY BARRIERS FORMED BETWEEN SEMICONDUCTORS AND ION INSERTION COMPOUNDS HAVING CONTINUOUSLY VARIABLE STOICHIOMETRIES AND WORK FUNCTIONS. IN PHASE I, THE DIODE P-SI/MXWO3 (M=H, LI, 0

* information listed above is at the time of submission.

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