ION BEAM DEPOSITION OF RF SUPERCONDUCTING FILMS

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$49,983.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
10636
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Eic Laboratories Inc
111 Downey St, Norwood, MA, 02062
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
James D Klein
Principal Investigator
(617) 769-9450
Business Contact:
() -
Research Institution:
n/a
Abstract
THE DEVELOPMENT OF A THIN FILM VACUUM DEPOSITION PROCESS SUITABLE FOR THE FABRICATION OF SUPERCONDUCTING MICROWAVE CIRCUIT ELEMENTS BASED ON HIGH-TCYBA2CU307-X IS PROPOSED. THEDUAL ION BEAM FABRICATION METHOD WILL FACILITATE LOW-TEMPERATURE DEPOSITION OF DENSE EPITAXIAL FILMS OF UNIFORM STOICHIOMETRY ON SEMICONDUCTING OR INSULATING SUBSTRATES. AS SUCH, THIS TECHNOLOGY WILL ALLEVIATE MANY OFTHE COMPLICATIONS IMPLICIT IN PRESENT HIGH TC DEPOSITION TECHNIQUES SUCH AS HIGH PROCESS TEMPERATURES AND LIMITED APPLICABILITY OF COMPATIBLE SUBSTRATE MATERIALS. SINCE MOST HIGH PERFORMANCE DEVICES WILL REQUIRE THE ACHIEVEMENT OF HIGH CRITICAL CURRENT DENSITIES IN DEPOSITED FILMS, A METHOD IS PROPOSED BY WHICH CONTINUITY, EPITAXY, AND STOICHIOMETRY ARE ENCOURAGED IN THE GROWTH OF THE SUPERCONDUCTING FILM. ION AND NEUTRAL BEAM ASSISTED DEPOSITION WILL BE USED TO PROMOTE LOW TEMPERATURE EPITAXIALGROWTH ACHIEVING DENSE FILMS WITH THE DESIRED (001) TEXTURE AND APPROPRIATE CATION AND OXYGEN STOICHIOMETRY. THE DEPOSITION SCHEME WILL AVOID HIGH TEMPERATURE ANNEALING SO THAT HIGH CRITICAL CURRENT DENSITY FILMS CAN BE GROWN DIRECTLY ONTO A VARIETY OF IMPORTANT SUBSTRATES SUCH AS SI, GAAS AND A1203 WITHOUT HARMFUL INTERDIFFUSION EFFECTS. DEVICE STRUCTURES AND SUPERCONDUCTING PROPERTIES APPROPRIATE FOR JOSEPHSON JUNCTION DEVICES, MICROSTRIPS, ANDCHIRP FILTERS WILL BE SOUGHT.

* information listed above is at the time of submission.

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