ION BEAM DEPOSITED FERROELECTRIC MEMORY FILMS

Award Information
Agency:
Department of Defense
Branch:
Defense Threat Reduction Agency
Amount:
$499,999.00
Award Year:
1993
Program:
SBIR
Phase:
Phase II
Contract:
N/A
Agency Tracking Number:
15352
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Eic Laboratory, Inc.
111 Downey Street, Norwood, MA, 02062
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 James D Klein
 Principal Investigator
 (617) 769-9450
Business Contact
Phone: () -
Research Institution
N/A
Abstract
COMPUTER MEMORY ARRAYS ARE EXTREMELY VULNERABLE TO ELECTROMAGNETIC DISTURBANCES RESULTING FROM ACCIDENTAL OR HOSTILE ACTIONS. HARDENING AGAINST SUCH EFFECTS CAN BE IMPARTED EITHER BY ADDING EXTERNAL PROTECTION TO EXISTING SYSTEMS OR BY INCORPORATING SURVIVABILITY IN NEW DESIGNS. INHERENT HARDNESS CAN BE IMPARTED TO RANDOM ACCESS MEMORY ARRAYS BY USING THIN FILM FERROELECTRIC MATERIALS AS MEMORY ELEMENTS. THE DEVELOPMENT OF AN OPTICALLY MONITORED ION BEAM TECHNIQUE FOR THE DEPOSITION OF FERROELECTRIC THIN FILMS IS PROPOSED. THE NOVEL PRODUCTION METHOD WILL PRODUCE IN-SITU PEROVSKITE FERROELECTRIC THIN FILMS OF THE DESIRED CHEMICAL COMPOSITION AND CRYSTALLOGRAPHIC PROPERTIES ON SI AND GAAS SEMICONDUCTOR SUBTRATES WITHOUT POST DEPOSITION FIRING AND ANNEALING. SPECIFICALLY, THE PROCESS IS DESIGNED TO ADDRESS ISSUES SUCH AS CATION STOCHIOMETRY, PHASE STABILITY, FILM/SUBSTRATE EPITAXY, SUBSTRATE TEMPERATURE, PROCESS FINGERPRINTING, AND REAL-TIME FEEDBACK CONTROL. SINCE THE AS-DEPOSITED FERROELECTRIC FILMS ARE INTENDED FOR NONVOLATILE MEMORY APPLICATIONS, ENDURANCE AND RETENTION CHARACTEISTICS ARE EXTREMELY INPORTANT. A MORE THOROUGH CHARACTERIZATION OF BASIC ELECTRONIC MATERIALS PROPERTIES IS PROPOSED IN ADDITION TO THE USUAL FERROELECTRIC BEHAVIOR AND MEMORY RETENTION TRIALS. THE IMPLEMENTATION OF REAL-TIME FEEDBACK CONTROL, EXTENSION TO OTHER FERROELECTRIC SYSTEMS, SCALE-UP TO PRODUCTION TECHNOLOGY, AND INTERGRATION IN ACTIVE ARRAYS WOULD BE ADDRESSED IN THE PHASE II PROGRAM.

* information listed above is at the time of submission.

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