AN INNOVATIVE APPROACH TO PRODUCE MULTI-MEGARAD HARD ELECTRONIC DEVICES FOR SPACEBORNE APPLICATIONS HAS BEEN PROPOSED, WHEREBY JUNCTION FIELD EFFECT TRANSISTORS (JFET) ARE DEVELOPED USING SILICON-ONINSULATOR (SOI) TECHNOLOGY.

Award Information
Agency:
Department of Defense
Branch
Defense Threat Reduction Agency
Amount:
$57,998.00
Award Year:
1986
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
3872
Agency Tracking Number:
3872
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
23887 Madison St, Torrance, CA, 90505
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
MICHAEL LEE
(213) 373-8779
Business Contact:
() -
Research Institute:
n/a
Abstract
AN INNOVATIVE APPROACH TO PRODUCE MULTI-MEGARAD HARD ELECTRONIC DEVICES FOR SPACEBORNE APPLICATIONS HAS BEEN PROPOSED, WHEREBY JUNCTION FIELD EFFECT TRANSISTORS (JFET) ARE DEVELOPED USING SILICON-ONINSULATOR (SOI) TECHNOLOGY. THE MULTIMEGARAD HARDNESS IS DERIVED FROM THE 'BURIED' CHANNEL OF THE JFET DEVICES AND THE REDUCTION OF ELECTROMIGRATION OF TRAPPED AND INDUCED CHARGES OF THE WELL-MATCHED SILICON/OXIDE INTERFACE OF THE SILICON-ON-INSULATOR WAFER, FABRICATED BY OXYGEN IMPLANT OF SILICON WAFER. THIS PROPOSED EFFORT IS PHASE 1 OF A 3-PHASE PROGRAM, CONCEIVED SPECIFICALLY TO EXPLOIT THE EMERGING SOI TECHNOLOGY BASED ON THE SILICON-IMPLANT-OXIDE (SIMOX) PROCESS. THE MAJOR TASKS FOR PHASE I ARE: ANALYSIS AND MODELING OF COMPLEMENTARY JFET (CJFET) DEVICES AND CIRCUITS.

* information listed above is at the time of submission.

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