MULTI-COLOR (HGTE)X(INSB)1-X ARRAY

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N/A
Agency Tracking Number: 5784
Amount: $65,223.00
Phase: Phase I
Program: SBIR
Awards Year: 1987
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa St, Torrance, CA, 90505
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 WILLIAM S CHAN
 (213) 373-8779
Business Contact
Phone: () -
Research Institution
N/A
Abstract
EPITAXIAL GROWTH OF MULTILAYERS OF (HGTE)X(INSB)1-X ON SILICON-ONSAPPHIRE (SOS) SUBSTRATES BY MOLECULAR BEAM EPITAXY (MBE) HAS BEEN PROPOSED. THE MBE TECHNIQUE CAN PRODUCE HIGH-QUALITY MULTIEPILAYERS OF (HGTE)X(INSB)1-X WITH DIFFERENT X VALUES, WHICH WILL GIVE RISE TO DIFFERENT CUTOFF WAVELENGTHS IN THE INFRARED SPECTRAL REGION. THUS, MULTICOLOR DETECTOR CAN BE MADE WITH THESE MULTIEPILAYER STRUCTURES ALONG WITH READOUT ELECTRONICS WHICH ARE ALSO FABRICATED ON THE SAME SOS SUBSTRATE. THE PROPOSED EFFORT IS PHASE I OF A THREE PHASE PROGRAM, WITH PHASE I TASKED TO DEFINE THE MBE GROWTH PROCESSES AND DESIGN THE EQUIPMENT MODIFICATIONS FOR FABRICATING THE (HGTE)X(INSB)1-X MULTIEPILAYERS AND THE MULTICOLOR DETECTOR ARRAYS.

* information listed above is at the time of submission.

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