HGCDTE EPITAXY ON SI SUBSTRATE

Award Information
Agency: Department of Defense
Branch: Army
Contract: N/A
Agency Tracking Number: 5785
Amount: $65,275.00
Phase: Phase I
Program: SBIR
Awards Year: 1987
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa St, Torrance, CA, 90505
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 WILLIAM S CHAN
 (213) 373-8779
Business Contact
Phone: () -
Research Institution
N/A
Abstract
A PROPOSAL IS MADE ON AN INNOVATIVE APPROACH TO PERFORM EPITAXIAL GROWTH OF HIGH-QUALITY HGCDTE(HCT) MATERIAL ON SILICON (SI) SUBSTRATES BY MOLECULAR BEAM EPITAXY (MBE). BY USING SI SUBSTRATE, A LARGE SURFACE AREA OF HCT EPITAXIAL LAYER CAN BE MADE RESULTING IN A POTENTIALLY COST-EFFECTIVE METHOD OF FABRICATING LARGE DETECTOR ARRAYS. THE PROPOSED INNOVATION FIRST EMPLOYS THE MBE TECHNIQUE TO FORM A PERFECTLY-BUFFERED SILICON SUBSTRATE ON WHICH TO PERFORM THE EPITAXY OF HCT. IT IS THEN FOLLOWED BY THE EPITAXY OF LOW DEFECT, HIGHLY UNIFORM HCT EPILAYER. THE OBJECTIVE OF PHASE I OF THE PROPOSED PROGRAM ARE: TO DEFINE AND DELINEATE THE COMPLETE MBE PROCESS FOR PERFORMING HGCDTE EPITAXY AND BUFFERED SUBSTRATES. TO ESTABLISH THE MBE COMPONENTS AND SUBSTRATE PREPARATION REQUIREMENTS.

* information listed above is at the time of submission.

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