HGCDTE EPITAXY ON SI SUBSTRATE

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$65,275.00
Award Year:
1987
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
5785
Agency Tracking Number:
5785
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
3152 Kashiwa St, Torrance, CA, 90505
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
WILLIAM S CHAN
(213) 373-8779
Business Contact:
() -
Research Institution:
n/a
Abstract
A PROPOSAL IS MADE ON AN INNOVATIVE APPROACH TO PERFORM EPITAXIAL GROWTH OF HIGH-QUALITY HGCDTE(HCT) MATERIAL ON SILICON (SI) SUBSTRATES BY MOLECULAR BEAM EPITAXY (MBE). BY USING SI SUBSTRATE, A LARGE SURFACE AREA OF HCT EPITAXIAL LAYER CAN BE MADE RESULTING IN A POTENTIALLY COST-EFFECTIVE METHOD OF FABRICATING LARGE DETECTOR ARRAYS. THE PROPOSED INNOVATION FIRST EMPLOYS THE MBE TECHNIQUE TO FORM A PERFECTLY-BUFFERED SILICON SUBSTRATE ON WHICH TO PERFORM THE EPITAXY OF HCT. IT IS THEN FOLLOWED BY THE EPITAXY OF LOW DEFECT, HIGHLY UNIFORM HCT EPILAYER. THE OBJECTIVE OF PHASE I OF THE PROPOSED PROGRAM ARE: TO DEFINE AND DELINEATE THE COMPLETE MBE PROCESS FOR PERFORMING HGCDTE EPITAXY AND BUFFERED SUBSTRATES. TO ESTABLISH THE MBE COMPONENTS AND SUBSTRATE PREPARATION REQUIREMENTS.

* information listed above is at the time of submission.

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