REACTIVE ION-BEAM EPITAXY OF ULTRASTRUCTURE FOR HIGH-T(C) SUPERCONDUCTOR FILMS

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 9663
Amount: $59,949.00
Phase: Phase I
Program: SBIR
Awards Year: 1989
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa St, Torrance, CA, 90505
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 William S Chan
 (213) 534-3666
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THIS EFFORT WILL INVESTIGATE THE CONTROLLED EPITAXY OF ULTRA-THIN, ALTERNATING LAYERS OF CUO AND BISRCAO ON A BUFFERED SI SUBSTRATE, FORMING AN ULTRASTRUCTURE APPROXIMATING CLOSELY THE MULTILAYERED STRUCTURE OF THE BISRCACUO SUPERCONDUCTOR. THE HIGH-QUALITY AND HIGH-RATE OF EPITAXIAL GROWTH IS ACCOMPLISHED BY DIRECT REACTION OF THE IONIC SPECIES ON THE SUBSTRATE SURFACE. THIS REACTION IS ENHANCED BY A FOCUSED PLASMA OF HIGHLY REACTIVE ATOMIC OXYGEN GENERATED BY AN ELECTRON-CYCLOTRON-RESONANCE SOURCE. FAST RESPONSE COMPUTER-CONTROLLED SHUTTERS WILL BE USED TO PERFORM THE EPITAXY OF THE ALTERNATING LAYERS WITH SHARP INTERFACES. THE MAIN OBJECTIVE OF THIS RESEARCH IS TO DEVELOP A WELL-CONTROLLED, REACTIVE MOLECULAR BEAM EPITAXY (RMBE) PROCESS FOR GROWTH OF SINGLE CRYSTALLINE, SINGLE PHASE FILMS NECESSARY TO SUPPORT HIGH-TC SUPERCONDUCTIVITY THROUGHOUT THE FILM STRUCTURE. THESE FILMS WILL BE DEVELOPED PRIMARILY FOR INFRARED DETECTION APPLICATIONS.

* information listed above is at the time of submission.

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