REACTIVE ION-BEAM EPITAXY OF ULTRASTRUCTURE FOR HIGH-T(C) SUPERCONDUCTOR FILMS

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$59,949.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
9663
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Electro-optek Corp
3152 Kashiwa St, Torrance, CA, 90505
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
William S Chan
(213) 534-3666
Business Contact:
() -
Research Institution:
n/a
Abstract
THIS EFFORT WILL INVESTIGATE THE CONTROLLED EPITAXY OF ULTRA-THIN, ALTERNATING LAYERS OF CUO AND BISRCAO ON A BUFFERED SI SUBSTRATE, FORMING AN ULTRASTRUCTURE APPROXIMATING CLOSELY THE MULTILAYERED STRUCTURE OF THE BISRCACUO SUPERCONDUCTOR. THE HIGH-QUALITY AND HIGH-RATE OF EPITAXIAL GROWTH IS ACCOMPLISHED BY DIRECT REACTION OF THE IONIC SPECIES ON THE SUBSTRATE SURFACE. THIS REACTION IS ENHANCED BY A FOCUSED PLASMA OF HIGHLY REACTIVE ATOMIC OXYGEN GENERATED BY AN ELECTRON-CYCLOTRON-RESONANCE SOURCE. FAST RESPONSE COMPUTER-CONTROLLED SHUTTERS WILL BE USED TO PERFORM THE EPITAXY OF THE ALTERNATING LAYERS WITH SHARP INTERFACES. THE MAIN OBJECTIVE OF THIS RESEARCH IS TO DEVELOP A WELL-CONTROLLED, REACTIVE MOLECULAR BEAM EPITAXY (RMBE) PROCESS FOR GROWTH OF SINGLE CRYSTALLINE, SINGLE PHASE FILMS NECESSARY TO SUPPORT HIGH-TC SUPERCONDUCTIVITY THROUGHOUT THE FILM STRUCTURE. THESE FILMS WILL BE DEVELOPED PRIMARILY FOR INFRARED DETECTION APPLICATIONS.

* information listed above is at the time of submission.

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