RADIATION-HARD VJFET DEVICES ON SOI SUBSTRATES

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$65,022.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
9664
Agency Tracking Number:
9664
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
3152 Kashiwa St, Torrance, CA, 90505
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr Jim Shie
(213) 534-3666
Business Contact:
() -
Research Institute:
n/a
Abstract
MANY ADVANCED MICROCIRCUITS USED IN MILITARY SYSTEMS HAVE TO BE HIGH SPEED, LOW NOISE AND RADIATION HARD, PARTICULARLY RADIATION HARD AGAINST NEUTRON IRRADIATION. A PROPOSAL IS MADE FOR THE DEVELOPMENT OF AN INNOVATIVE TECHNOLOGY FOR FABRICATING V-GROOVED JUNCTION-FIELD-EFFECT TRANSISTOR (VJFET) AND MICROCIRCUITS ON SILICON-ON-INSULATOR (SOI) WAFERS TO MEET THESE ADVANCED REQUIREMENTS. THIS TECHNOLOGY USES MICROMACHINING TO FABRICATE MICRO V-GROOVES TO SUPPORT THE FORMATION OF JFET DEVICES HAVING SUBMICRON GATE LENGTHS AND SELF-ALIGNED GATE CONFIGURATIONS, RESULTING IN VJFET STRUCTURES WITH TIGHTLY-CONTROLLED SUBMICRON DIMENSIONS NECESSARY FOR VERY HIGH-SPEED, LOW NOISE AND RADIATION-HARD APPLICATIONS. THE SOI WAFER WILL ELIMINATE LATCH-UP EFFECTS, REDUCE NEUTRON-CAPTURE VOLUME AND PROVIDE ELECTRICAL ISOLATION FOR VJFET MICROCIRCUIT FABRICATION. THE RESULTANT VJFET IS HIGHLY DESIRABLE FOR FABRICATING VERY HIGH-SPEED (20 GIGAHZ) MICROCIRCUITS THAT MUST SURVIVE HIGH RADIATION (NATURAL OR INDUCED) ENVIRONMENTS. THE AIM OF PHASE I IS TO ESTABLISH A MODEL FOR THE VJFET AND TO DEFINE THE PROCESSES AND REQUIREMENTS FOR FABRICATING THE DESIRED SUBMICRON STRUCTURES.

* information listed above is at the time of submission.

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