RADIATION-HARD VJFET DEVICES ON SOI SUBSTRATES

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 9664
Amount: $65,022.00
Phase: Phase I
Program: SBIR
Awards Year: 1989
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
3152 Kashiwa St, Torrance, CA, 90505
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr Jim Shie
 (213) 534-3666
Business Contact
Phone: () -
Research Institution
N/A
Abstract
MANY ADVANCED MICROCIRCUITS USED IN MILITARY SYSTEMS HAVE TO BE HIGH SPEED, LOW NOISE AND RADIATION HARD, PARTICULARLY RADIATION HARD AGAINST NEUTRON IRRADIATION. A PROPOSAL IS MADE FOR THE DEVELOPMENT OF AN INNOVATIVE TECHNOLOGY FOR FABRICATING V-GROOVED JUNCTION-FIELD-EFFECT TRANSISTOR (VJFET) AND MICROCIRCUITS ON SILICON-ON-INSULATOR (SOI) WAFERS TO MEET THESE ADVANCED REQUIREMENTS. THIS TECHNOLOGY USES MICROMACHINING TO FABRICATE MICRO V-GROOVES TO SUPPORT THE FORMATION OF JFET DEVICES HAVING SUBMICRON GATE LENGTHS AND SELF-ALIGNED GATE CONFIGURATIONS, RESULTING IN VJFET STRUCTURES WITH TIGHTLY-CONTROLLED SUBMICRON DIMENSIONS NECESSARY FOR VERY HIGH-SPEED, LOW NOISE AND RADIATION-HARD APPLICATIONS. THE SOI WAFER WILL ELIMINATE LATCH-UP EFFECTS, REDUCE NEUTRON-CAPTURE VOLUME AND PROVIDE ELECTRICAL ISOLATION FOR VJFET MICROCIRCUIT FABRICATION. THE RESULTANT VJFET IS HIGHLY DESIRABLE FOR FABRICATING VERY HIGH-SPEED (20 GIGAHZ) MICROCIRCUITS THAT MUST SURVIVE HIGH RADIATION (NATURAL OR INDUCED) ENVIRONMENTS. THE AIM OF PHASE I IS TO ESTABLISH A MODEL FOR THE VJFET AND TO DEFINE THE PROCESSES AND REQUIREMENTS FOR FABRICATING THE DESIRED SUBMICRON STRUCTURES.

* Information listed above is at the time of submission. *

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