CRYOGENICALLY-COOLED INSB JFET

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: N/A
Agency Tracking Number: 10438
Amount: $495,369.00
Phase: Phase II
Program: SBIR
Awards Year: 1990
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
3152 Kashiwa St, Torrance, CA, 90505
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr William S Chan
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract
MANY MICROELECTRONIC CIRCUITS USED IN HIGH-PERFORMANCE INFRARED SYSTEMS ARE REQUIRED TO OPERATE AT CRYOGENIC TEMPERATURES AND BE LOW NOISE AT THE SAME TIME. THESE APPLICATIONS DEMAND INNOVATIONS. THE DEVELOPMENT OF A NEW AND INNOVATIVE TECHNOLOGY FOR INSB JUNCTION-FIELD-EFFECT TRANSISTOR (JFET) DEVICES AND CIRCUITS IS PROPOSED. IT IS BASED ON MOLECULAR BEAM EPITAXY (MBE) OF INSB LAYERS ON INSBAND SAPPHIRE SUBSTRATES. THE N- AND P-LAYERS CAN BE MADE BY IN-SITU DOPING, THUS THE JFET STRUCTURE CAN BE FABRICATEDREADILY BY MBE. THE RESULTANT INSB JFET DEVICES CAN BE OPERATED AT A TEMPERATURE BELOW 2K AND ARE CAPABLE OF EXTREMELY LOW NOISE (< 1 NANOVOLT/HZ(1/2), TWO HIGHLY DESIRABLE CHARACTERISTICS FOR ELECTRONICS FOR INFRARED (IR) SENSORS IN THE LONG WAVE-LENGTH IR (LWIR) SPECTRAL REGION. THE AIM OF PHASE I IS TO ESTABLISH THE LOW TEMPERATURE MODEL FOR INSB JFET AND TO DEFINE THE MBE PROCESSES AND REQUIREMENTS TO FABRICATE THE MULTIEPILAYER STRUCTURE.

* Information listed above is at the time of submission. *

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