CRYOGENICALLY-COOLED INSB JFET

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$495,369.00
Award Year:
1990
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
10438
Agency Tracking Number:
10438
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Electro-optek Corp. (Currently Electro-optek Corp)
3152 Kashiwa St, Torrance, CA, 90505
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr William S Chan
() -
Business Contact:
() -
Research Institution:
n/a
Abstract
MANY MICROELECTRONIC CIRCUITS USED IN HIGH-PERFORMANCE INFRARED SYSTEMS ARE REQUIRED TO OPERATE AT CRYOGENIC TEMPERATURES AND BE LOW NOISE AT THE SAME TIME. THESE APPLICATIONS DEMAND INNOVATIONS. THE DEVELOPMENT OF A NEW AND INNOVATIVE TECHNOLOGY FOR INSB JUNCTION-FIELD-EFFECT TRANSISTOR (JFET) DEVICES AND CIRCUITS IS PROPOSED. IT IS BASED ON MOLECULAR BEAM EPITAXY (MBE) OF INSB LAYERS ON INSBAND SAPPHIRE SUBSTRATES. THE N- AND P-LAYERS CAN BE MADE BY IN-SITU DOPING, THUS THE JFET STRUCTURE CAN BE FABRICATEDREADILY BY MBE. THE RESULTANT INSB JFET DEVICES CAN BE OPERATED AT A TEMPERATURE BELOW 2K AND ARE CAPABLE OF EXTREMELY LOW NOISE (< 1 NANOVOLT/HZ(1/2), TWO HIGHLY DESIRABLE CHARACTERISTICS FOR ELECTRONICS FOR INFRARED (IR) SENSORS IN THE LONG WAVE-LENGTH IR (LWIR) SPECTRAL REGION. THE AIM OF PHASE I IS TO ESTABLISH THE LOW TEMPERATURE MODEL FOR INSB JFET AND TO DEFINE THE MBE PROCESSES AND REQUIREMENTS TO FABRICATE THE MULTIEPILAYER STRUCTURE.

* information listed above is at the time of submission.

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