FABRICATION OF PHOTOVOLTAIC LASER ENERGY CONVERTER BY MBE

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: N/A
Agency Tracking Number: 10439
Amount: $481,150.00
Phase: Phase II
Program: SBIR
Awards Year: 1990
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
3152 Kashiwa St, Torrance, CA, 90505
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr William S Chan
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract
AN INNOVATIVE APPROACH IS PROPOSED FOR FABRICATING SERIES-CONNECTED MULTIPLE VERTICAL P-N JUNCTIONS ON SILICON BY MOLECULAR BEAM EPITAXY (MBE) FOR CONVERTING HIGH INTENSITY (1X10(3)W/CM(2)) LASER TO ELECTRICAL POWER IN SPACE-BASED LASER POWER STATIONS. THIS APPROACH INVOLVES PRECISELY CONTROLING THE EPITAXY OF ALTERNATING LAYERS OF COBALT SILICIDE, P-DOPED SI AND N-DOPED SI FORMING A SINGLE-CRYSTAL A STRUCTURE CONTAINING 500 TO 1000 P-N JUNCTIONS PER CM. CONNECTED IN SERIES SPECIAL E-BEAM ASSISTED HEATED KNUDSEN SOURCES WILL BE USED TO PERFORM THE MULTILAYER EPITAXY TO MINIMIZE THE OCCURENCE OF PINHOLES IN THE SILICIDE LAYERS AND ACHIEVE ABRUPT P-N JUNCTION GROWTH OVER A LONG MBE GROWTH PERIOD. THE COBALT SILICIDE THUS FORMED WILL HAVE AN ULTRA-LOW RESISTANCE OF LESS THAN 1X10(-3) OHM NECESSARY FOR HIGH CONVERSION EFFICIENCY.

* Information listed above is at the time of submission. *

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