FABRICATION OF PHOTOVOLTAIC LASER ENERGY CONVERTER BY MBE

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$481,150.00
Award Year:
1990
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
10439
Agency Tracking Number:
10439
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
3152 Kashiwa St, Torrance, CA, 90505
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr William S Chan
() -
Business Contact:
() -
Research Institute:
n/a
Abstract
AN INNOVATIVE APPROACH IS PROPOSED FOR FABRICATING SERIES-CONNECTED MULTIPLE VERTICAL P-N JUNCTIONS ON SILICON BY MOLECULAR BEAM EPITAXY (MBE) FOR CONVERTING HIGH INTENSITY (1X10(3)W/CM(2)) LASER TO ELECTRICAL POWER IN SPACE-BASED LASER POWER STATIONS. THIS APPROACH INVOLVES PRECISELY CONTROLING THE EPITAXY OF ALTERNATING LAYERS OF COBALT SILICIDE, P-DOPED SI AND N-DOPED SI FORMING A SINGLE-CRYSTAL A STRUCTURE CONTAINING 500 TO 1000 P-N JUNCTIONS PER CM. CONNECTED IN SERIES SPECIAL E-BEAM ASSISTED HEATED KNUDSEN SOURCES WILL BE USED TO PERFORM THE MULTILAYER EPITAXY TO MINIMIZE THE OCCURENCE OF PINHOLES IN THE SILICIDE LAYERS AND ACHIEVE ABRUPT P-N JUNCTION GROWTH OVER A LONG MBE GROWTH PERIOD. THE COBALT SILICIDE THUS FORMED WILL HAVE AN ULTRA-LOW RESISTANCE OF LESS THAN 1X10(-3) OHM NECESSARY FOR HIGH CONVERSION EFFICIENCY.

* information listed above is at the time of submission.

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