FABRICATION OF INSB INFRARED ARRAYS BY MOLECULAR BEAM EPITAXY

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$49,988.00
Award Year:
1990
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
11775
Agency Tracking Number:
11775
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
3152 Kashiwa Street, Torrance, CA, 90505
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr C F Huang
Research Engineer
() -
Business Contact:
() -
Research Institute:
n/a
Abstract
A PROPOSAL IS MADE TO DEVELOP HIGH-PERFORMANCE INSB DETECTORARRAYS BY MOLECULAR BEAM EPITAXY (MBE) ON GAAS. THIS EFFORTWILL FIRST DEVELOP TWO STRAINED SUPERLATTICES (SSL) IN TANDEM FOR A NEAR-PERFECT LATTICE MATCH BETWEEN THE INSB AND GAAS, AND THEN FABRICATE THE P-N JUNCTIONS FOR THE 3-5 MICRON SPECTRAL REGION. THE SUPERLATTICE BUFFER WILL SERVE TO BLOCK MISFIT DISLOCATIONS FROM PROPAGATING INTO THE INSB. THE EPITAXY OF THE N-TYPE AND P-TYPE EPILAYERS WILL BE MADE IN TANDEM BY IN-SITU DOPING TO FORM THE P-N JUNCTIONDETECTORS.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government