FABRICATION OF INSB INFRARED ARRAYS BY MOLECULAR BEAM EPITAXY

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 11775
Amount: $49,988.00
Phase: Phase I
Program: SBIR
Awards Year: 1990
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
3152 Kashiwa Street, Torrance, CA, 90505
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr C F Huang
 Research Engineer
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract
A PROPOSAL IS MADE TO DEVELOP HIGH-PERFORMANCE INSB DETECTORARRAYS BY MOLECULAR BEAM EPITAXY (MBE) ON GAAS. THIS EFFORTWILL FIRST DEVELOP TWO STRAINED SUPERLATTICES (SSL) IN TANDEM FOR A NEAR-PERFECT LATTICE MATCH BETWEEN THE INSB AND GAAS, AND THEN FABRICATE THE P-N JUNCTIONS FOR THE 3-5 MICRON SPECTRAL REGION. THE SUPERLATTICE BUFFER WILL SERVE TO BLOCK MISFIT DISLOCATIONS FROM PROPAGATING INTO THE INSB. THE EPITAXY OF THE N-TYPE AND P-TYPE EPILAYERS WILL BE MADE IN TANDEM BY IN-SITU DOPING TO FORM THE P-N JUNCTIONDETECTORS.

* Information listed above is at the time of submission. *

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