FABRICATION OF INSB INFRARED ARRAYS BY MOLECULAR BEAM EPITAXY

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$49,988.00
Award Year:
1990
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
11775
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Electro-optek Corp
3152 Kashiwa Street, Torrance, CA, 90505
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr C F Huang
Research Engineer
() -
Business Contact:
() -
Research Institution:
n/a
Abstract
A PROPOSAL IS MADE TO DEVELOP HIGH-PERFORMANCE INSB DETECTORARRAYS BY MOLECULAR BEAM EPITAXY (MBE) ON GAAS. THIS EFFORTWILL FIRST DEVELOP TWO STRAINED SUPERLATTICES (SSL) IN TANDEM FOR A NEAR-PERFECT LATTICE MATCH BETWEEN THE INSB AND GAAS, AND THEN FABRICATE THE P-N JUNCTIONS FOR THE 3-5 MICRON SPECTRAL REGION. THE SUPERLATTICE BUFFER WILL SERVE TO BLOCK MISFIT DISLOCATIONS FROM PROPAGATING INTO THE INSB. THE EPITAXY OF THE N-TYPE AND P-TYPE EPILAYERS WILL BE MADE IN TANDEM BY IN-SITU DOPING TO FORM THE P-N JUNCTIONDETECTORS.

* information listed above is at the time of submission.

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