IN-SITU GROWTH OF INDIUM ARSENIDE ANTIMONIDE LONGWAVELENGTH PHOTODIODES

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$252,228.00
Award Year:
1992
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
11774
Agency Tracking Number:
11774
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
3152 Kashiwa Street, Torrance, CA, 90505
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
William S Chan
President
() -
Business Contact:
() -
Research Institute:
n/a
Abstract
THE RECENT ADVANCES IN BANDGAP ENGINEERING BY MOLECULAR BEAM EPITAXY (MBE) HAVE PRODUCED A STRAINED SUPERLATTICE (SSL) OF INSB/INA -XSBX CAPABLE OF BEING MADE INTO PHOTODIODE DETECTORS SUITABLE FOR THE LONG WAVELENGTH INFRARED (LWIR, 8-14 MICRON) SPECTRAL RANGE. THIS PROPOSAL IS MADE TO DEVELOP THE PHOTODIODES DURING EPITAXY OF THE SSLON BUFFERED SILICON (SI). THE EFFORT WILL DEVELOP A SUITABLE MULTILAYERED BUFFER FOR NEAR-PERFECT LATTICE MATCHING BETWEEN THE SI AND SSL, GROW THE SSL TAILORED FOR LWIR AND FORM THE PHOTODIODES IN-SITU. SPECIAL EFFUSION SOURCES, EPITAXIAL PROCESSES AND TRIAL EPITAXY WILL BE DESIGNED, DELINEATED AND MADE, RESPECTIVELY, IN PHASE I FOR THE PHOTODIODE DEVELOPMENT.

* information listed above is at the time of submission.

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