FABRICATION OF LONG WAVELENGTH ARRAY BY IN-SITU MOLECULAR BEAM EPITAXY

Award Information
Agency:
Department of Defense
Amount:
$52,641.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Army
Award Year:
1991
Phase:
Phase I
Agency Tracking Number:
15827
Solicitation Topic Code:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa St, Torrance, CA, 90505
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 C F Huang
 Principal Investigator
 (213) 534-3666
Business Contact
Phone: () -
Research Institution
N/A
Abstract
BANDGAP ENGINEERING BY MOLECULAR BEAM EPITAXY (MBE) IS NOT ONLY CAPABLE OF PRODUCING A STRAINED SUPERLATTICE (SSL) OF INSB/INAS(1-X)SB(X) FOR LONGWAVELENGTH INFRARED (LWIR, 8-12 MICRON) DETECTORS, BUT IS ALSO CAPABLE OF PROCESSING THE DETECTORS INTO A MONOLITHIC ARRAY. WE WILL DEVELOP THE MBE PROCESS FIRST TO GROW THE SSL ON A BUFFERED SILICON (SI) SUBSTRATE AND THEN DELINATE THE SSL INTO AN ARRAY OF PHOTODIODES WHICH CAN BE INTERFACED DIRECTLY ONTO A READOUT CIRCUITRY PREVIOUSLY FABRICATED ON THE SAME SI SUBSTRATE. THUS, A MONOLITHIC ARRAY IS FABRICATED IN-SITU DURING A SINGLE EPITAXY PROCESS. THE KEY INNOVATION PROPOSED IS THE COMBINING OF THE SSL EPITAXY, PHOTODIODE FORMATION AND READOUT ELECTRONIC INTERFACING AS A SINGLE PROCESS FOR FABRICATING THE MONOLITHIC ARRAY. WHEN SUCCESSFULLY DEVELOPED, THE PROCESS SHOULD BE HIGH YIELD, LOW COST AND CAPABLE OF PRODUCING HIGH-PERFORMANCE LWIR DETECTOR ARRAYS BY ELIMINATING THE USE OF WET CHEMICAL ETCHING.

* information listed above is at the time of submission.

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