SILICON BASED UNCOOLED HIGH PERFORMANCE LWIR ARRAYS

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$49,894.00
Award Year:
1991
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
17185
Agency Tracking Number:
17185
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
3152 Kashiwa St, Torrance, CA, 90505
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
() -
Business Contact:
() -
Research Institute:
n/a
Abstract
ELECTRO-OPTEK PROPOSES TO DEVELOP A NOVEL AND INNOVATIVE METHOD OF FABRICATING LARGE-AREA LONG WAVELENGTH INFRARED (LWIR) DETECTOR ARRAYS THAT CAN OPERATE AT ROOM TEMPERATURE. THIS TECHNIQUE USES ESTABLISHED TECHNOLOGIES OF MICRO-MACHINING AND MICROELECTRONIC PROCESSING OF SILICON (SI) WAFERS FOR FABRICATING MONOLITHIC ARRAYS OF LWIR DETECTORS. THE DETECTOR ELEMENTS OF THE ARRAY ARE FORMED BY AN ULTRA-THIN FILM OF A BOLOMETER MATERIAL POSSESSING THE HIGHEST TEMPERATURE COEFFICIENT OF RESISTANCE KNOWN, AND THE READOUT ELECTRONIC MICROCIRCUIT IS FABRICATED ON THE SAME SILICON CHIP NEXT TO THE ELEMENTS. THE RESULTANT DETECTOR ARRAYS WILL POSSESS FEATURES OF LOW COST, LOW WEIGHT, HIGH RESPONSIVITY AND HIGH SENSITIVITY. THE LOW COST IS DUE TO A SINGLE BATCH PROCESS IN THE ARRAY FABRICATION. THE LOW WEIGHT IS DUE TO A MONOLITHIC ARRAY STRUCTURE REQUIRING NO COOLING. THE HIGH RESPONSIVITY IS DUE A LARGE TEMPERATURE COEFFICIENT OF RESISTIVITY (>15% COMPARED TO 0.2% FOR A CONVENTIONAL BOLOMETER) OF OUR NEW BOLOMETER MATERIAL. THE HIGH SENSITIVITY IS DUE TO THE COMBINED EFFECTS OF HIGH RESPONSIVITY, LOW NOISE AND HIGH THERMAL ISOLATION OF THE BOLOMETER FROM ITS SURROUNDINGS.

* information listed above is at the time of submission.

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