Radiation Hard Silicon Schottky Barrier LWIR Focal Plane Arrays

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$49,614.00
Award Year:
1992
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
18019
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Electro-optek Corp.
3152 Kashiwa Street, Torrance, CA, 90505
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
V.k. Raman
(310) 534-3666
Business Contact:
() -
Research Institution:
n/a
Abstract
Electro-Optek proposes to fabricate ultra radiation hard, high-sensitivity, long wavelength infrared focal plane arrays using IrSi3/Si Schottky Barrier (SB) infrared detectors grown by molecular beam epitaxy on silicon-on-insulator substrates. The SB photodiodes of Iriduim siliconide/Si, are processed by a special codeposition MBE process with readout electronics on SOI substrates forming a monolithic array. The reverse bias of the SB diode will be used to tailor the spectral response in the LWIR (9-14 micron). Our overall goal is to develop the SB array with high density, and optimize it for a 40% quantum efficiency, a 1% non-uniformity and a fabrication cost comparable to that of the existing Pt-silicide SB array covering the LWIR. Since the FPAs are built on SOI substrates, the arrays will be ultra-radiation hard. These novel arrays will find applications in FLIRs, space-based interceptors and early warning and surveillance systems.

* information listed above is at the time of submission.

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