Electron Transfer Tech

Company Information

Company Name
Electron Transfer Tech
Address
155 Campus Plaza
Edison, NJ, 08818
Phone
n/a
URL
n/a
DUNS
n/a
Number of Employees
n/a
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$470,992.00
8
SBIR Phase II
$400,000.00
1
Chart code to be here

Award List

  1. ALTERNATIVE STERILIZATION PROCESS FOR HEAT LIABLE GOODS

    Amount: $50,000.00

    A TWO STEP PROCESS FOR THE STERILIZATION OF HEAT LIABLE GOODS IS PROPOSED IN WHICH THE OXIDATION STRENGTH OF A GAS OR VAPOR IS ENHANCED THROUGH A PHOTOCHEMICAL REACTION. THE PHOTOCHEMICAL REACTION PRO ...

    SBIR Phase I 1988 ArmyDepartment of Defense
  2. DIRECT OXIDATION OF HYDROCARBONS WITH A BIPOLAR METAL HYDRIDE FUEL CELL

    Amount: $50,000.00

    A NOVEL METHOD FOR THE DIRECT OXIDATION OF HYDROCARBON FUELS FOR THE PRODUCTION OF ELECTRICAL POWER IN A FUEL CELL IS PRESENTED. THE METHOD DISSOCIATES AND DEHYDROGENATES HYDROCARBON FUELS, SUCH AS ME ...

    SBIR Phase I 1989 National Science Foundation
  3. ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

    Amount: $400,000.00

    PHOSPHINE (PH3) IS A GAS NECESSARY FOR MAKING COMPOUND SEMICONDUCTORS SUCH AS INP, INAS(1-X)PX, GAP, AND GAAS(1-X)PX AS WELL AS A DOPANT SOURCE FOR SILICON. IT IS A VERY TOXIC GAS WITH A TLV OF 0.3 PP ...

    SBIR Phase II 1993 Missile Defense AgencyDepartment of Defense
  4. Point Of Use Chlorine Gas Generator For Wafer Fabrication

    Amount: $62,420.00

    A point of use generator for chlorine gas production is proposed. The generator would provide ultrahigh purity chlorine which is necessary to enhance the growth rate and decrease the impurity level in ...

    SBIR Phase I 1993 Defense Advanced Research Projects AgencyDepartment of Defense
  5. On-Line Hydride Gas Process Monitor for Compound Semiconductor and Silicon Wafer Fabrication

    Amount: $70,576.00

    The fabrication of III-IV compound semiconductors, such as GaAs, and silicon semiconductors requires the use of the hydride gases phosphine and arsine. The accuracte sensing of the concentration of th ...

    SBIR Phase I 1994 Defense Advanced Research Projects AgencyDepartment of Defense
  6. Point of Use Generation of Hydrogen Selenide for Electronic Device Fabrication

    Amount: $59,853.00

    A point of use generator for hydrogram selenide (H2Se) gas production is proposed. The generator would greatly decrease the safety risk of wafer fabrication with the toxic gas while providing higher p ...

    SBIR Phase I 1994 Defense Advanced Research Projects AgencyDepartment of Defense
  7. POINT OF USE GENERATION OF GASES FOR OPTOELECTRONIC DEVICE FABRICATION

    Amount: $50,000.00

    N/A

    SBIR Phase I 1990 Missile Defense AgencyDepartment of Defense
  8. SBIR PHASE I: On-Site Silane Gas Generator for Semiconductor Manufacturing

    Amount: $75,000.00

    N/A

    SBIR Phase I 1997 National Science Foundation
  9. ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

    Amount: $53,143.00

    N/A

    SBIR Phase I 1991 Missile Defense AgencyDepartment of Defense

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