ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$400,000.00
Award Year:
1993
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
15625
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Electron Transfer Technologies
Po Box 160, Princeton, NJ, 08542
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
William M Ayers
Principal Investigator
(609) 921-0070
Business Contact:
() -
Research Institution:
n/a
Abstract
PHOSPHINE (PH3) IS A GAS NECESSARY FOR MAKING COMPOUND SEMICONDUCTORS SUCH AS INP, INAS(1-X)PX, GAP, AND GAAS(1-X)PX AS WELL AS A DOPANT SOURCE FOR SILICON. IT IS A VERY TOXIC GAS WITH A TLV OF 0.3 PPM. NEW REGULATIONS MAKE THE TRANSPORT, STORAGE, AND HANDLING OF COMPRESSED GAS CYLINDERS OF PHOSPHINE INCREASINGLY DIFFICULT. TO AVOID THESE PROBLEMS, WE ARE DEVELOPING A COMPACT POINT OF USE PHOSPHINE GENERATOR. THE GENERATOR WILL PRODUCE SEMICONDUCTOR GRADE PHOSPHINE ON DEMAND AT THE SEMICONDUCTOR FABRICATION FACILITY. THIS DEVELOPMENT WILL PROVIDE A MUCH SAFER SOURCE OF PHOSPHINE.

* information listed above is at the time of submission.

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