On-Line Hydride Gas Process Monitor for Compound Semiconductor and Silicon Wafer Fabrication

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$70,576.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
26696
Agency Tracking Number:
26696
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
P.o. Box 160, Princeton, NJ, 08542
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
William Ayers
(609) 921-0070
Business Contact:
() -
Research Institute:
n/a
Abstract
The fabrication of III-IV compound semiconductors, such as GaAs, and silicon semiconductors requires the use of the hydride gases phosphine and arsine. The accuracte sensing of the concentration of these gases is essential for high yield device fabrication. Presently the only methods for detecting these gase for on-line process control are very expensive sensor units. In Phase I of these project, we propose the investigation of several new sensing techniques to develop a low cost (<$3000) hydride gas sensor for on-line process control and monitoring. In Phase II we will construct prototype hydride sensors and test them at several major semiconductor fabrication facilities. Anticipated Benefits: The development of a low cost on-line arsine and phosphine concentration sensor will improve semiconductor manufacturing efficiency through greater wafer yields.

* information listed above is at the time of submission.

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