Components for High Performance Nanosatellites

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q04CR083
Agency Tracking Number: 03SB2-0584
Amount: $98,997.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1340 Eisenhower Place, Ann Arbor, MI, 48108
DUNS: 836493759
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Alex Margomenos
 Senior Research Engineer
 (734) 973-6600
 amargo@emagtech.com
Business Contact
 Kazem Sabet
Title: President
Phone: (734) 973-6600
Email: ksabet@emagtech.com
Research Institution
N/A
Abstract
The overall goal of the proposed two-phase SBIR project is to develop a low-cost, reliable, miniaturized RF component suitable for nanosatellites, in order for them to achieve functionality similar to larger spacecrafts. EMAG Technologies proposes todevelop a novel multi-chip module (MCM) technology based on revolutionary concepts in packaging and integration that will reduce the RF communication package size and volume by two orders of magnitude. We will demonstrate these new technologies by buildingand characterizing a Ka-band steerable sub-array. The proposed transmit module will be fabricated on high resistivity silicon wafers using mature micromachining technologies which can produce: multilayer interconnects, on-wafer packaged RF MEMS, phaseshifters, monolithically integrated passive elements, cavity filters, and photonic band-gap substrates for parasitic resonance reduction. All these architectures can be integrated on a single chip thus forming miniaturized multi-chip modules with highperformance and functionality. The proposed work will be based on our extensive completed work on three-dimensional integration and silicon micromachining for RF applications which resulted in 3D RF transitions, filters, low-loss interconnects,distribution networks for arrays, on-wafer packaged RF MEMS and photonic band-gap silicon substrates for operation up to W-band.

* Information listed above is at the time of submission. *

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