EMCORE CORP.

Basic Information

394 Elizabeth Ave.
Somerset, NJ, 08873

Company Profile

n/a

Additional Details

Field Value
DUNS: 122245046
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 310


  1. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $0.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIR Phase I 2003 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  2. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $300,000.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIR Phase II 2003 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  3. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $449,955.00

    N/A

    SBIR Phase II 2000 NavyDepartment of DefenseDepartment of Defense
  4. N/A

    Amount: $64,987.00

    N/A

    SBIR Phase I 2000 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  5. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $69,967.00

    N/A

    SBIR Phase I 1999 NavyDepartment of DefenseDepartment of Defense
  6. Innovative Approach to Optimizing the Piezoelectric Effect for High Power GaN FETs

    Amount: $64,824.00

    N/A

    SBIR Phase I 1999 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  7. Epitaxial Growth of Silicon Carbide (SiC)

    Amount: $97,570.00

    N/A

    SBIR Phase I 1999 Air ForceDepartment of DefenseDepartment of Defense
  8. N/A

    Amount: $1,044.00

    N/A

    SBIR Phase II 1999 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  9. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reactors

    Amount: $64,835.00

    A successful large area ELO GaN process technology will lead to a low cost 'virtual substrate' for LED and high performance III-N based devices. We propose to investigate the application of this techn ...

    SBIR Phase I 1998 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  10. GAN BASED HIGH TEMPERATURE ULTRAVIOLET PHOTODETECTORS

    Amount: $591,640.00

    N/A

    SBIR Phase II 1997 National Aeronautics and Space Administration

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