EMCORE CORP.

Basic Information

394 Elizabeth Ave.
Somerset, NJ, 08873

Company Profile

n/a

Additional Details

Field Value
DUNS: 122245046
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 310


  1. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $0.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIR Phase I 2003 Missile Defense Agency Department of Defense
  2. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $300,000.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIR Phase II 2003 Missile Defense Agency Department of Defense
  3. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $449,955.00

    N/A

    SBIR Phase II 2000 Navy Department of Defense
  4. N/A

    Amount: $64,987.00

    N/A

    SBIR Phase I 2000 Missile Defense Agency Department of Defense
  5. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $69,967.00

    N/A

    SBIR Phase I 1999 Navy Department of Defense
  6. Innovative Approach to Optimizing the Piezoelectric Effect for High Power GaN FETs

    Amount: $64,824.00

    N/A

    SBIR Phase I 1999 Missile Defense Agency Department of Defense
  7. Epitaxial Growth of Silicon Carbide (SiC)

    Amount: $97,570.00

    N/A

    SBIR Phase I 1999 Air Force Department of Defense
  8. N/A

    Amount: $1,044.00

    N/A

    SBIR Phase II 1999 Missile Defense Agency Department of Defense
  9. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reactors

    Amount: $64,835.00

    A successful large area ELO GaN process technology will lead to a low cost 'virtual substrate' for LED and high performance III-N based devices. We propose to investigate the application of this techn ...

    SBIR Phase I 1998 Missile Defense Agency Department of Defense
  10. GaN LED UV Pumped Multi-Color & White Light Phosphors Using Innovative Immersion Techniques for Display Applications

    Amount: $59,860.00

    The use of UV LEDs for creating visible light by exciting commercially available phosphors will be explored. LEDs based on the (InAlGa)N materials system, now currently used to produce high brightness ...

    SBIR Phase I 1997 Missile Defense Agency Department of Defense

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