EMCORE CORP.

Company Information
Address 394 Elizabeth Ave.
Somerset, NJ, 08873


Information

DUNS: 122245046

# of Employees: 310


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $0.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIRPhase I2003Missile Defense Agency Department of Defense
  2. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $300,000.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIRPhase II2003Missile Defense Agency Department of Defense
  3. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $449,955.00

    N/A

    SBIRPhase II2000Navy Department of Defense
  4. N/A

    Amount: $64,987.00

    N/A

    SBIRPhase I2000Missile Defense Agency Department of Defense
  5. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $69,967.00

    N/A

    SBIRPhase I1999Navy Department of Defense
  6. Innovative Approach to Optimizing the Piezoelectric Effect for High Power GaN FETs

    Amount: $64,824.00

    N/A

    SBIRPhase I1999Missile Defense Agency Department of Defense
  7. Epitaxial Growth of Silicon Carbide (SiC)

    Amount: $97,570.00

    N/A

    SBIRPhase I1999Air Force Department of Defense
  8. N/A

    Amount: $1,044.00

    N/A

    SBIRPhase II1999Missile Defense Agency Department of Defense
  9. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reactors

    Amount: $64,835.00

    A successful large area ELO GaN process technology will lead to a low cost 'virtual substrate' for LED and high performance III-N based devices. We propose to investigate the application of this techn ...

    SBIRPhase I1998Missile Defense Agency Department of Defense
  10. GaN LED UV Pumped Multi-Color & White Light Phosphors Using Innovative Immersion Techniques for Display Applications

    Amount: $59,860.00

    The use of UV LEDs for creating visible light by exciting commercially available phosphors will be explored. LEDs based on the (InAlGa)N materials system, now currently used to produce high brightness ...

    SBIRPhase I1997Missile Defense Agency Department of Defense

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