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EMCORE CORP.

Company Information
Address
394 Elizabeth Ave.
Somerset, NJ 08873
United States



Information

DUNS: 122245046

# of Employees: 310


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No




Success Stories

  1. SBIR-STTR-Success:Emcore Corp. (Veeco Instruments, Inc.)

    The name may seem obscure, but the technology—used in everything from cell phones to light bulbs and satellites—is critical to modern life. And one company, backed by Department of Defense (DoD) Small Business Innovation Research (SBIR) funding, is at the technology’s cutting edge. That company...

Award Charts




Award Listing

  1. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $0.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIRPhase I2003Department of Defense Missile Defense Agency
  2. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $300,000.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIRPhase II2003Department of Defense Missile Defense Agency
  3. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $449,955.00

    N/A

    SBIRPhase II2000Department of Defense Navy
  4. N/A

    Amount: $64,987.00

    N/A

    SBIRPhase I2000Department of Defense Missile Defense Agency
  5. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $69,967.00

    N/A

    SBIRPhase I1999Department of Defense Navy
  6. Innovative Approach to Optimizing the Piezoelectric Effect for High Power GaN FETs

    Amount: $64,824.00

    N/A

    SBIRPhase I1999Department of Defense Missile Defense Agency
  7. Epitaxial Growth of Silicon Carbide (SiC)

    Amount: $97,570.00

    N/A

    SBIRPhase I1999Department of Defense Air Force
  8. N/A

    Amount: $1,044.00

    N/A

    SBIRPhase II1999Department of Defense Missile Defense Agency
  9. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reactors

    Amount: $64,835.00

    A successful large area ELO GaN process technology will lead to a low cost 'virtual substrate' for LED and high performance III-N based devices. We propose to investigate the application of this techn ...

    SBIRPhase I1998Department of Defense Missile Defense Agency
  10. GaN LED UV Pumped Multi-Color & White Light Phosphors Using Innovative Immersion Techniques for Display Applications

    Amount: $59,860.00

    The use of UV LEDs for creating visible light by exciting commercially available phosphors will be explored. LEDs based on the (InAlGa)N materials system, now currently used to produce high brightness ...

    SBIRPhase I1997Department of Defense Missile Defense Agency
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