EMCORE CORP.

Company Information

Company Name
EMCORE CORP.
Address
394 Elizabeth Ave.
Somerset, NJ, 08873
Phone
1 732-271-9090
URL
n/a
DUNS
122245046
Number of Employees
310
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,800,367.00
32
SBIR Phase II
$4,755,403.00
11
Chart code to be here

Award List

  1. IN-SITU PROCESS MONITORING OF MOCVD BY PHOTOREFLECTANCE

    Amount: $49,995.00

    METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) IS A VAPOR-PHASE METHOD OF EPITAXIAL GROWTH WHICH YIELDS HIGH-PURITY SEMICONDUCTORS. COMPOSITIONAL AND STRUCTURAL CONTROL HAVE BEEN ACHIEVED BY UTILIZIN ...

    SBIR Phase I 1988 Defense Advanced Research Projects AgencyDepartment of Defense
  2. HYDROGEN RADICAL ASSISED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (HRAMOCVD) OF GAAS AND ALGAAS EXPITAXIAL LAYERS

    Amount: $406,767.00

    IMPROVED COMPOSITIONAL CONTROL AND ENHANCEMENT OF SEMICONDUCTOR AND OPTO-ELECTRONIC MATERIALS ARE NECESSARY FOR THE FUTURE DEVELOPMENT OF DEVICES WHICH ARE DEPENDENT ON COMPLEX ULTRA-STRUCTURES. THIS ...

    SBIR Phase II 1990 Air ForceDepartment of Defense
  3. DEVELOPMENT OF DEVICE QUALITY SINGLE CRYSTAL THIN FILMS OF HIGH T(C) SUPERCONDUCTORS BY MOCVD

    Amount: $49,994.00

    METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) IS A VAPOR PHASE EXPITAXIAL TECHNIQUE WHICH HAS BEEN USED TO GROW HIGH PURITY SEMICONDUCTORS. THE MOCVD TECHNIQUE GIVES EXCELLENT CONTROL OVER COMPOSITI ...

    SBIR Phase I 1988 Air ForceDepartment of Defense
  4. MOCVD GROWN GAAS/ALGAAS AND GAAS/INGAAS STRUCTURES WITH APPLICATION TO HEMTS

    Amount: $49,994.00

    UNTIL RECENTLY, NEARLY ALL MAJOR WORK ON HEMTS HAS BEEN PERFORMED BY MBE. WITHIN THE LAST YEAR, SEVERAL JAPANESE COMPANIES, AFTER INTENSIVE RESEARCH EFFORTS, HAVE BEGUN TO OFFER MOCVD-GROWTH HEMT DEVI ...

    SBIR Phase I 1988 ArmyDepartment of Defense
  5. ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE IN A ROTATING-DISK REACTOR

    Amount: $765,000.00

    ATOMIC LAYER EPITAXY (ALE) IS A PROMISING GROWTH TECHNIQUE. THE ATTRACTIVENESS OF ALE FOR FUTURE DEVICE AND INTEGRATED CIRCUIT APPLICATIONS CAN BE UNDERSTOOD BY CONSIDERING SEVERAL DESIRABLE ATTRI-BUT ...

    SBIR Phase II 1990 Missile Defense AgencyDepartment of Defense
  6. DEVELOPMENT OF A SUBSTITUTE FOR (HIGH TOXIC) ARSINE GAS FOR USE IN FABRICATION OF GALLIUM ARSENIDE

    Amount: $50,000.00

    THE USE OF ARSINE FOR THE GROWTH OF GAAS EPITAXIAL LAYERS BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) IS COMING UNDER INCREASING SCRUTINY BY GOVERNMENT AGENCIES AND COMMUNITIES. THE EXTREME TOXI ...

    SBIR Phase I 1990 Defense Advanced Research Projects AgencyDepartment of Defense
  7. "RESEARCH OF NOVEL II-VI SOLAR CELLS"

    Amount: $47,250.00

    THE EPITAXIAL GROWTH OF NOVEL II-VI SOLAR CELL STRUCTURES WILL BE INVESTIGATED. IN PHASE I, THE METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) PROCESS PARAMETERS AND ASSOCIATED GROWTH CHEMISTRIES FOR ...

    SBIR Phase I 1990 National Science Foundation
  8. LOW TEMPERATURE FABRICATION OF HIGH TC SUPERCONDUCTING THIN FILMS BY PLASMA ENHANCED MOCVD PROCESS

    Amount: $492,986.00

    THE TECHNIQUE OF LOW TEMPERATURE IN SITU FORMATION OF HIGH TC SUPERCONDUCTING THIN FILMS IS CRUCIAL FOR EARLY APPLICATIONS OF COPPER OXIDE-BASED CERAMIC WITH SUPERCONDUCTIVITY ABOVE LIQUID NITROGEN TE ...

    SBIR Phase II 1991 Air ForceDepartment of Defense
  9. DEVELOPMENT OF GROWTH APPARATUS FOR THE MICROWAVE PLASMA-ASSISTED DEPOSITION OF DIAMOND-LIKE AND REFRACTORY THIN FILMS

    Amount: $498,011.00

    THE TECHNIQUE OF LOW TEMPERATURE FORMATION OF DIAMOND-LIKE AND REFRACTORY THIN FILMS USING PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION (PA-CVD) IS CRUCIAL FOR MANY DOD APPLICATIONS. THE DEVELOPMENT OF S ...

    SBIR Phase II 1991 ArmyDepartment of Defense
  10. DEVELOPMENT OF SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) PRODUCTION TECHNOLOGY

    Amount: $49,810.00

    THIS PROPOSAL ADDRESSES THE EPITAXIAL GROWTH OF SI/SIGE HBT DEVICES. THIS WILL BE ACCOMPLISHED USING AN ULTRAHIGH VACUUM EPITAXIAL GROWTH SYSTEM COMBINED WITH THE DEVELOPMENT OF AN ADVANCED, CARRIER G ...

    SBIR Phase I 1990 Air ForceDepartment of Defense

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