EMCORE CORP.

Company Information
Address 394 Elizabeth Ave.
Somerset, NJ, 08873


Information

DUNS: 122245046

# of Employees: 310


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $0.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIRPhase I2003Missile Defense Agency Department of Defense
  2. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    Amount: $300,000.00

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIRPhase II2003Missile Defense Agency Department of Defense
  3. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $449,955.00

    N/A

    SBIRPhase II2000Navy Department of Defense
  4. N/A

    Amount: $64,987.00

    N/A

    SBIRPhase I2000Missile Defense Agency Department of Defense
  5. Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

    Amount: $69,967.00

    N/A

    SBIRPhase I1999Navy Department of Defense
  6. Innovative Approach to Optimizing the Piezoelectric Effect for High Power GaN FETs

    Amount: $64,824.00

    N/A

    SBIRPhase I1999Missile Defense Agency Department of Defense
  7. Epitaxial Growth of Silicon Carbide (SiC)

    Amount: $97,570.00

    N/A

    SBIRPhase I1999Air Force Department of Defense
  8. N/A

    Amount: $1,044.00

    N/A

    SBIRPhase II1999Missile Defense Agency Department of Defense
  9. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reactors

    Amount: $64,835.00

    A successful large area ELO GaN process technology will lead to a low cost 'virtual substrate' for LED and high performance III-N based devices. We propose to investigate the application of this techn ...

    SBIRPhase I1998Missile Defense Agency Department of Defense
  10. GAN BASED HIGH TEMPERATURE ULTRAVIOLET PHOTODETECTORS

    Amount: $591,640.00

    N/A

    SBIRPhase II1997National Aeronautics and Space Administration

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