ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE IN A ROTATING-DISK REACTOR

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$765,000.00
Award Year:
1990
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
8575
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Emcore Corp.
35 Elizabeth Ave, Somerset, NJ, 08873
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr Peter Norris
(201) 753-1311
Business Contact:
() -
Research Institution:
n/a
Abstract
ATOMIC LAYER EPITAXY (ALE) IS A PROMISING GROWTH TECHNIQUE. THE ATTRACTIVENESS OF ALE FOR FUTURE DEVICE AND INTEGRATED CIRCUIT APPLICATIONS CAN BE UNDERSTOOD BY CONSIDERING SEVERAL DESIRABLE ATTRI-BUTES FOR EPITAXIAL GROWTH TECHNIQUES. THESE INCLUDE LOWER DEFECT DENSITY, IMPROVED UNIFORMITY OF THICKNESS AND DOPING, IMPROVED THICKNESS CONTROL, AND THE POSSIBILITY OF CONFORMAL EPITAXY. A MAJOR PROBLEM WITH PRESENT ALE METHODS IS LOW GROWTH RATE, WHICH IS SUBSTANTIALLY LESS THAN A MONOLAYER PER SECOND. THE FEASIBILITY IS BEINGDEMONSTRATED OF ALE GROWTH OF GALLIUM-ARSENIDE IN A ROTATING DISK GEO-METRY METALORGAIC CHEMICAL VAPOR DEPOSITION (MOCVD) REACTOR. THE PRO-PORTIONALITY OF GROWTH RATE TO ROTATION RATE IS BEING DEMONSTRATED. IT IS ANTICIPATED THAT THIS WOULD ALLOW THE FABRICATION OF STRUCTURES WHICH REQUIRE BOTH HIGH AND LOW GROWTH RATES IN A SINGLE SYSTEM WITHOUT MAJOR PERTURBATIONS DURING GROWTH. THIS IS PARTICULARLY IMPORTANTFOR STRUCTURES WHERE ABRUPT INTERFACES ARE NECESSARY AND YET HAVE SUBSTANTIAL TOTAL EPITAXIAL THICKNESS. THE DEMONSTRATION OF A SIGNIFICANT ENHANCED GROWTH RATE IS A REQUIREMENT FOR THE DEVELOPMENT OF PRACTICAL ALE-BASED MATERIALS AND DEVICE TECHNOLOGIES. SUCCESSFUL DEVELOPMENT OF THE TECHNIQUES FOR REPRODUCIBLE GROWING DEVICE-QUALITY GALLIUM-ARSENIDE BY ALE WOULD HAVE MAJOR IMPLICATIONS FOR A BROAD RANGE OF DEVICE APPLICATIONS INCLUDING SENSORS, HIGH-SPEED ELECTRONIC DEVICES AND INTEGRATED CIRCUIT DEVELOPMENT.

* information listed above is at the time of submission.

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