ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE IN A ROTATING-DISK REACTOR

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 8575
Amount: $765,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1990
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
35 Elizabeth Ave, Somerset, NJ, 08873
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr Peter Norris
 (201) 753-1311
Business Contact
Phone: () -
Research Institution
N/A
Abstract
ATOMIC LAYER EPITAXY (ALE) IS A PROMISING GROWTH TECHNIQUE. THE ATTRACTIVENESS OF ALE FOR FUTURE DEVICE AND INTEGRATED CIRCUIT APPLICATIONS CAN BE UNDERSTOOD BY CONSIDERING SEVERAL DESIRABLE ATTRI-BUTES FOR EPITAXIAL GROWTH TECHNIQUES. THESE INCLUDE LOWER DEFECT DENSITY, IMPROVED UNIFORMITY OF THICKNESS AND DOPING, IMPROVED THICKNESS CONTROL, AND THE POSSIBILITY OF CONFORMAL EPITAXY. A MAJOR PROBLEM WITH PRESENT ALE METHODS IS LOW GROWTH RATE, WHICH IS SUBSTANTIALLY LESS THAN A MONOLAYER PER SECOND. THE FEASIBILITY IS BEINGDEMONSTRATED OF ALE GROWTH OF GALLIUM-ARSENIDE IN A ROTATING DISK GEO-METRY METALORGAIC CHEMICAL VAPOR DEPOSITION (MOCVD) REACTOR. THE PRO-PORTIONALITY OF GROWTH RATE TO ROTATION RATE IS BEING DEMONSTRATED. IT IS ANTICIPATED THAT THIS WOULD ALLOW THE FABRICATION OF STRUCTURES WHICH REQUIRE BOTH HIGH AND LOW GROWTH RATES IN A SINGLE SYSTEM WITHOUT MAJOR PERTURBATIONS DURING GROWTH. THIS IS PARTICULARLY IMPORTANTFOR STRUCTURES WHERE ABRUPT INTERFACES ARE NECESSARY AND YET HAVE SUBSTANTIAL TOTAL EPITAXIAL THICKNESS. THE DEMONSTRATION OF A SIGNIFICANT ENHANCED GROWTH RATE IS A REQUIREMENT FOR THE DEVELOPMENT OF PRACTICAL ALE-BASED MATERIALS AND DEVICE TECHNOLOGIES. SUCCESSFUL DEVELOPMENT OF THE TECHNIQUES FOR REPRODUCIBLE GROWING DEVICE-QUALITY GALLIUM-ARSENIDE BY ALE WOULD HAVE MAJOR IMPLICATIONS FOR A BROAD RANGE OF DEVICE APPLICATIONS INCLUDING SENSORS, HIGH-SPEED ELECTRONIC DEVICES AND INTEGRATED CIRCUIT DEVELOPMENT.

* Information listed above is at the time of submission. *

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