DEVELOPMENT OF SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) PRODUCTION TECHNOLOGY

Award Information
Agency:
Department of Defense
Amount:
$49,810.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Air Force
Award Year:
1990
Phase:
Phase I
Agency Tracking Number:
12453
Solicitation Topic Code:
N/A
Small Business Information
Emcore Corp
35 Elizabeth Ave, Somerset, NJ, 08873
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Dr Gary S Tompa
 (201) 271-9090
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THIS PROPOSAL ADDRESSES THE EPITAXIAL GROWTH OF SI/SIGE HBT DEVICES. THIS WILL BE ACCOMPLISHED USING AN ULTRAHIGH VACUUM EPITAXIAL GROWTH SYSTEM COMBINED WITH THE DEVELOPMENT OF AN ADVANCED, CARRIER GAS BASED, VAPOR TRANSPORT TECHNIQUE OPERATING IN THE 10(-3) - 10(-6) TORR RANGE. THE TECHNIQUE IS CALLED VAPOR TRANSPORT EPITAXY (VTE). GROUP IV MATERIALS SUCH AS SI/SIGE ARE OF PARTICULAR INTEREST, SINCE THEY PROMISE TO BE THE NEXT GENERATION IN HIGH SPEED SI BASED DEVICES. IN PHASE I, THE GROWTH AND MATERIALS CHARACTERISTICS OF SI/SIGE STRUCTURES WOULD BE DETERMINED. IN PHASE II DOPING TECHNIQUES WOULD BE ESTABLISHED AND FUNCTIONAL DEVICES WOULD BE FABRICATED AND CHARACTERIZED. ALSO IN PHASE II FET STRUCTURES WILL BE INVESTIGATED. ???????????

* information listed above is at the time of submission.

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