IMPROVED PRECURSORS FOR THE METALORGANIC CVD OF YBCO THIN FILMS

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$49,315.00
Award Year:
1991
Program:
SBIR
Phase:
Phase I
Contract:
N/A
Agency Tracking Number:
15627
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Emcore Corpon
35 Elizabeth Avenue, Somerset, NJ, 08873
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 Dr Peter E Norris
 Principal Investigator
 (908) 271-9090
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THIS PROGRAM WILL DEVELOP SUITABLE PRECURSORS, PARTICULARLY FOR BARIUM WHICH EXHIBIT INCREASED VOLATILITY AND STABILITY IN THE METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) PROCESS OF HTSC FILMS BY PYROLYZING ORGANOMETALLIC PRECURSORS AT THE SUBSTRATE SURFACE. MOCVD OFFERS THE ADVANTAGES OF SCALE-UP CAPABILITY, HIGHLY OXIDIZING DEPOSITION CONDITIONS, LOW-TEMPERATURE DEPOSITION CAPABILITY, AND EXCELLENT COMPOSITIONAL CONTROL. IN CONTRAST TO THE CASE OF III/V COMPOUND SEMICONDUCTORS, THE PRECURSORS COMMONLY AVAILABLE FOR Y, BA AND CU ARE LOW VOLATILITY SOLIDS. WHICH UNFORTUNATELY NEED SUBSTANTIAL HEATING (125-250 DEGREES CELSIUS) TO OBTAIN USEFUL GROWTH RATES. THIS DEMANDS HIGH TEMPERATURE COMPONENTS, HEATED LINES AND A MORE COMPLEX MOCVD SYSTEM DESIGN. THE HIGH TEMPERATURE, THOUGH ENCOURAGE A SIGNIFCANT DEGREE WHICH ADVERSELY AFFECTS THE DEPOSITION PROCESS.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government