MOCVD Growth of III-V Nitrides on SiC SOI Wafers in a Multi-Wafer Rotating Reactor

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$79,946.00
Award Year:
1995
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
27979
Agency Tracking Number:
27979
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
35 Elizabeth Avenue, Somerset, NJ, 08873
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Chong Yuan
(908) 271-9090
Business Contact:
() -
Research Institution:
n/a
Abstract
III-nitrides have been receiving greatly increased attention for potential laser applications at blue and ultraviolet wavelengths. (GaN, AIN, and InN or their alloys are the major candidates for these applications. Currently, one of the major hurdles in the development of this technology is the lack of suitable single crystal substrate material which is lattice-matched and thermally compatible with GaN. The SiC SOI structure which has a very thin film of crystalline cubic 3C-SiC (50-1000A) on an insular layer (SiO2) is a potential candidate for a low cost, large area, high quality substrate. The SOI approach may turn out to be superior to SiC grown directly on Si substrates (which results in voids and other defects) or on 6H-SiC substrates (which suffer from high cost, small area, micro pipes). In addition, the lattice mismatch between GaN and SiC is small (approx 3%) and as is the thermal expansion coefficient difference. Combining SiC SOI structure formation and III-V nitrides growth by MOCVD technology, III-V nitride materials will obtain a new substrate candidate for cubic nitride material growth and future laser applications.

* information listed above is at the time of submission.

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