Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0001400C0238
Agency Tracking Number: 98-0412
Amount: $0.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
394 Elizabeth Ave., Somerset, NJ, 08873
DUNS: 122245046
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
  Ferguson
 Director
 (732) 271-9090
Business Contact
  Hess
Title: Corporate Comptroller
Phone: (732) 271-9090
Research Institution
N/A
Abstract
It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

* Information listed above is at the time of submission. *

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