Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0001400C0238
Agency Tracking Number: 98-0412
Amount: $0.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
394 Elizabeth Ave., Somerset, NJ, 08873
DUNS: 122245046
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 (732) 271-9090
Business Contact
Title: Corporate Comptroller
Phone: (732) 271-9090
Research Institution
It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

* Information listed above is at the time of submission. *

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