Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$300,000.00
Award Year:
2003
Program:
SBIR
Phase:
Phase II
Contract:
N0001400C0238
Award Id:
64467
Agency Tracking Number:
98-0412
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
394 Elizabeth Ave., Somerset, NJ, 08873
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
122245046
Principal Investigator:
Ferguson
Director
(732) 271-9090
Business Contact:
Hess
Corporate Comptroller
(732) 271-9090
Research Institute:
n/a
Abstract
It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

* information listed above is at the time of submission.

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