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Wide bandgap SiC based field effect transistor for radiation hard microelectronics

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-18-C-7446
Agency Tracking Number: B181-007-0113
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: MDA18-007
Solicitation Number: 2018.1
Solicitation Year: 2018
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-06-25
Award End Date (Contract End Date): 2018-12-24
Small Business Information
44 Hunt Street
Watertown, MA 02472
United States
DUNS: 073804411
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Pijush Bhattacharya
 (617) 668-6801
Business Contact
 Kanai Shah
Phone: (617) 668-6801
Research Institution

The goal of this project is to develop basic semiconductor components (field-effect transistors) that can be deployed in highly radioactive environments, such as nuclear plants, space, radioactive waste storage facilities. Ionizing radiation often has a detrimental influence on the performance of microelectronics components. We propose to develop a prototype microelectronics technology for use in high-radiation environments that will exceed current device performance. Our prototype system will be based on a field-effect transistor and contain custom-engineered metal oxide channel materials. These materials are selected for their exceptional radiation hardness, high dielectric coefficients and the ease of which they could be integrated into current CMOS manufacturing processes. In this Phase I project, we will fabricate carefully-designed devices, and test their resistance to ionizing radiation, including neutron beam, X-rays and gamma-rays, using our in-house sources. We will use this data to provide a path forward for future radiation-hard CMOS components.Approved for Public Release | 18-MDA-9710 (6 Jul 18)

* Information listed above is at the time of submission. *

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