Lightweight Dual Junction Radiation Hardened Solar Cells

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-18-P-0231
Agency Tracking Number: F181-040-0393
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: AF181-040
Solicitation Number: 2018.1
Solicitation Year: 2018
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-07-24
Award End Date (Contract End Date): 2019-07-24
Small Business Information
6457 Howard Street, Niles, IL, 60714
DUNS: 135553472
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Rao Tatavarti
 (847) 588-3001
Business Contact
 Noren Pan
Phone: (847) 588-3001
Research Institution
In this Phase I SBIR, Microlink Devices in collaboration with Prof. Jeehwan Kim of MIT will develop a low cost, flexible, radiation hard dual junction InGaP/GaAs solar cell using graphene assisted epitaxy for space application.The innovation in this Phase I SBIR is the development of low cost, light weight, flexible epitaxial lift-off (ELO) InGaP/GaAs dual junction (DJ) solar cells with improved beginningof-life (BoL) to end-of-life (EoL) efficiency ratio >77% and suitable for deployment in solar electric propulsion space applications.In this Phase I program we will develop a 30% AM0 efficient ELO DJ InGaP/GaAs solar cell. We intend to improve the EoL efficiency of ELO DJ cells by the application of wavelength specific photonic structures at the back of the solar cell and also reducing GaAs subcell thickness of the DJ cell. The grapheme assisted remote epitaxy and subsequent exfoliation will help in developing a fast turn around epitaxiallift-off process, which can help in cost reduction.

* Information listed above is at the time of submission. *

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