High Growth Rate GaN MOCVD Platform for Ultrahigh Voltage Devices

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-18-C-0744
Agency Tracking Number: N182-134-0092
Amount: $124,986.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N182-134
Solicitation Number: 2018.2
Timeline
Solicitation Year: 2018
Award Year: 2019
Award Start Date (Proposal Award Date): 2018-10-15
Award End Date (Contract End Date): 2019-04-18
Small Business Information
6595 Edenvale Blvd, Eden Prairie, MN, 55346
DUNS: 054898964
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Gary Hering
 (952) 937-7505
 ross.miller@agnitron.com
Business Contact
 Ross Miller
Phone: (952) 937-7505
Email: ross.miller@agnitron.com
Research Institution
N/A
Abstract
Future DoD and Navy missions require advances in current high voltage power electronics technology. In this proposed effort, Agnitron will investigate the limitations of existing MOCVD technology and propose solutions towards an MOCVD system for Gallium Nitride capable of growth rates over 10um per hour at pressures from low to super atmospheric. The goal is to achieve low background concentrations under these conditions as well as demonstrate heavily doped p+ and n+ (Al)GaN layers <50nm thick. At the end of this program we will establish a plan for optimizing the growth process as well as reactor configuration to meet the objectives of the Phase I program.

* Information listed above is at the time of submission. *

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