Third Generation Infrared Focal Plane Arrays based on HOT" HgCdTe Detectors"

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$64,821.00
Award Year:
2001
Program:
STTR
Phase:
Phase I
Contract:
DAAB07-01-C-L862
Award Id:
53175
Agency Tracking Number:
01-0004T
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator:
RenganathanAshokan
Senior Scientist
(630) 771-0206
ashokan@smartpixelinc.com
Business Contact:
SivaSivananthan
President
(630) 215-3324
ssiva@smartpixelinc.com
Research Institute:
UNIV. OF ILLINOIS AT CHICAGO
Byron E.Helms
305E Administrative office bld, 1737 W.Polk St.
Chicago, IL, 60607
(312) 996-7952
Nonprofit college or university
Abstract
HgCdTe infrared arrays operating at 77K can now be tailored to a wide range of wavelengths ranging from 1 to 14 mm. However, the cooling requirements of traditional detectors make them bulky and unsuitable for many applications. Due to advancements inmaterials and device technologies, it is now possible to fabricate HgCdTe-based infrared arrays operating close to room temperature with sensitivities better than GaAs based image intensifiers and noise equivalent temperature differences (NETD) comparableto or better than bolometric and pyroelectric imaging arrays. We propose a new generation of lightweight, compact, high efficiency infrared focal plane arrays that operate near room temperature. Consequently, very large array formats with minimal powerdissipation, payload, and improved image resolution are achievable. This will be an asset to BMDO's missile development programs. The goals will be achieved by i) using the established flexible manufacturing molecular beam epitaxy technology for devicequality HgCdTe materials growth on large area silicon substrates, and ii) incorporating novel device architectures including minority carrier exclusion and extraction to achieve a nonequilibrium mode of operation. This will enhance the minority carrierlifetime and consequently increase the operating temperatures. It will be possible to produce rugged, low-cost, large area `HOT' focal plane arrays.Significant potential exists for optoelectronic and microelectronic applications in the military, space,communication, medical, and automobile industries. Buick, BMW have already implemented infrared sensors in their latest cars and many other companies are expected to follow.

* information listed above is at the time of submission.

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