BMDO02-003E-IR(>0.9 microns) CdTeSe composite substrates lattice-matched with HgCdTe for advanced LWIR sensing focal plane arrays

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,993.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
DASG60-02-P-0191
Award Id:
58723
Agency Tracking Number:
02-0448
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
614747525
Principal Investigator:
Paul Boieriu
Engineer/Res Associate
(630) 771-0203
paul@epir.com
Business Contact:
Sivalingam Sivananthan
President
(630) 771-0203
siva@epir.com
Research Institution:
n/a
Abstract
"High-performance HgCdTe focal plane arrays (FPAs) sensing in the long-wavelength (LWIR) and very long wavelength (VLWIR) infrared spectral ranges are highly desirable for various applications supporting missile defense capabilities. Advanced sensorstructures based on dual or multi-color HgCdTe IRFPAs will enhance early missile threat detection while providing mid-course tracking capabilities and discrimination data. An extremely high quality photon detector material becomes imperative in order tomeet these requirements. As the research and development efforts are advancing, it has become obvious that substrate limitations are impeding the progress of LWIR HgCdTe FPAs. During the proposed Phase I effort, we intend to address the feasibility ofepitaxially grown CdTeSe buffer layers on silicon. We plan to develop this novel type of lattice-matched substrate for the growth of HgCdTe (0.2 < x < 0.3). Growth of CdTeSe on silicon is expected to be a better alternative than epitaxial CdZnTe/Si for thegrowth of extremely high quality LWIR HgCdTe on large areas. Distinct features like low segregation coefficient, diffusion constants and specific atomic/elemental properties recommend CdTeSe/Si as a successful substrate candidate for the epitaxial growthof Hg0.8Cd0.2Te. EPIR Ltd. is poised to make composite epitaxial substrates commercially available to a strong U.S. IR manufacturing industry while continuing to focus its resources on the develo

* information listed above is at the time of submission.

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