BMDO02-003E-IR(>0.9 microns) CdTeSe composite substrates lattice-matched with HgCdTe for advanced LWIR sensing focal plane arrays

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG60-02-P-0191
Agency Tracking Number: 02-0448
Amount: $69,993.00
Phase: Phase I
Program: SBIR
Awards Year: 2002
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Epir, Ltd.
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Duns: 614747525
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Paul Boieriu
 Engineer/Res Associate
 (630) 771-0203
 paul@epir.com
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0203
Email: siva@epir.com
Research Institution
N/A
Abstract
"High-performance HgCdTe focal plane arrays (FPAs) sensing in the long-wavelength (LWIR) and very long wavelength (VLWIR) infrared spectral ranges are highly desirable for various applications supporting missile defense capabilities. Advanced sensorstructures based on dual or multi-color HgCdTe IRFPAs will enhance early missile threat detection while providing mid-course tracking capabilities and discrimination data. An extremely high quality photon detector material becomes imperative in order tomeet these requirements. As the research and development efforts are advancing, it has become obvious that substrate limitations are impeding the progress of LWIR HgCdTe FPAs. During the proposed Phase I effort, we intend to address the feasibility ofepitaxially grown CdTeSe buffer layers on silicon. We plan to develop this novel type of lattice-matched substrate for the growth of HgCdTe (0.2 < x < 0.3). Growth of CdTeSe on silicon is expected to be a better alternative than epitaxial CdZnTe/Si for thegrowth of extremely high quality LWIR HgCdTe on large areas. Distinct features like low segregation coefficient, diffusion constants and specific atomic/elemental properties recommend CdTeSe/Si as a successful substrate candidate for the epitaxial growthof Hg0.8Cd0.2Te. EPIR Ltd. is poised to make composite epitaxial substrates commercially available to a strong U.S. IR manufacturing industry while continuing to focus its resources on the develo

* information listed above is at the time of submission.

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