Superlattice Materials for Very-Long Wavelength Infrared Detectors (VLWIR)

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: FA8650-04-C-5423
Agency Tracking Number: 021ML-0707
Amount: $749,839.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
DUNS: 068568588
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 HyeSon Jung
 (630) 771-0203
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0201
Research Institution
The fabrication of large format, highly sensitive focal plane arrays (FPAs) sensing at very long wavelengths in the infrared region (VLWIR), i.e. beyond 15um, is highly desirable for the Air Force's space-based applications. Currently, only limited typesof arrays such as 256 X 256 Si:As are available in this spectral region. However, these extrinsic detectors suffer from several fundamental limitations, such as low quantum efficiencies, relatively low detection sensitivities and low operatingtemperatures. Intrinsic detectors made from HgTe/CdTe superlattices (SLs) have several advantages over them, including lower noise, higher operating temperatures and higher quantum efficiencies. The cut-off wavelength of HgTe/CdTe SLs can easily be tunedto the VLWIR by adjusting the layer thickness of the HgTe layers. This results in greater cut-off uniformity than that achievable by controlling the alloy composition of bulk HgCdTe. Another important advantage of HgTe/CdTe SLs compared to bulk HgCdTeincludes the ability to achieve p-type doping without high temperature annealing. Furthermore, these SLs can be grown on Si substrates, which would pave the way to megapixel hybrid or possibly monolithic VLWIR FPAs. Through the design of HgTe/CdTe SLelectronic band structures and device properties, and in-situ control of layer thickness, we proposed the growth of high quality SLs for the fabrication of high performance infrared detectors with cut-off wavelengths between 20-25 microns and operatingtemperatures above 40 K.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government