Multi-color VLWIR Focal Plane Array

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$749,965.00
Award Year:
2004
Program:
SBIR
Phase:
Phase II
Contract:
FA8650-04-C-5432
Agency Tracking Number:
031-0121
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
EPIR TECHNOLOGIES, INC.
590 Territorial Drive Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator:
Paul Boieriu
Principal Investigator
(630) 771-0205
pboieriu@epir.com
Business Contact:
Sivalingam Sivananthan
President
(630) 771-0201
siva@epir.com
Research Institution:
n/a
Abstract
We propose the development of high quality HgCdTe-based materials and high performance two-color detector arrays operating in the very-long wavelength infrared (VLWIR) spectral region. The fabrication of large format, high sensitivity focal plane arrays sensing in the VLWIR is highly desirable for various applications complementing Missile Defense, Army, Navy, and Air Force capabilities. They will improve the detection capabilities in all major MDA infrared systems either as separate arrays or when used together with current mid-wavelength (MWIR) or long wavelength (LWIR) infrared systems. Building on our current expertise, the first material system to be developed in this program will be a VLWIR detector based on HgCdTe alloys. Our current technology used for MWIR and LWIR detectors will be extended towards longer wavelengths. Improved material quality, new design architectures and new fabrication techniques will contribute to the success of this development effort. We also propose to develop HgTe/CdTe superlattice systems since they possess a number of desirable properties over both alloy HgCdTe and QWIP devices in the VLWIR region. Alloy and superlattice-based VLWIR detectors will be integrated into a multicolor system. We will use molecular beam epitaxy because it produces material of excellent quality and allows composition and doping control at atomic scale level over multiple epilayers in complex structures.

* information listed above is at the time of submission.

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