Strained Layer Superlattice Using HgTe for VLWIR Detection

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-06-C-0113
Agency Tracking Number: B041-082-1024
Amount: $700,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2006
Solicitation Year: 2004
Solicitation Topic Code: MDA04-082
Solicitation Number: 2004.1
Small Business Information
EPIR TECHNOLOGIES INC
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
DUNS: 068568588
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Paul Boieriu
 Senior Engineer
 (630) 771-0206
 pboieriu@epir.com
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0206
Email: siva@epir.com
Research Institution
N/A
Abstract
Despite considerable progress with bulk HgCdTe photovoltaic technology, difficulties persist in sensing wavelengths longer than 12 microns with bulk alloy material due to the limitations imposed by high Auger recombination rates and large tunneling dark currents. Strained layer superlattices using HgTe layers and lattice mismatched layers based on ZnTe alloys are an extremely promising alternative for infrared systems requiring higher-temperature and longer-wavelength operation. In this type of superlattice, the active region layers are strained, thereby suppressing Auger recombination and thus allowing infrared sensing devices to be operated at temperatures above current standards. Moreover, the strain simultaneously suppresses tunneling currents. This SBIR program focuses on the development of buffer layers for the growth of VLWIR strained-layer superlattices, the growth and characterization of such superlattices and the fabrication and characterization of infrared detectors based on these materials.

* information listed above is at the time of submission.

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