Automated Wafer Polishing for Epi-ready Antimony-based Substrate Materials

Award Information
Agency:
Department of Defense
Amount:
$699,953.00
Program:
SBIR
Contract:
W9113M-06-C-0114
Solitcitation Year:
2004
Solicitation Number:
2004.1
Branch:
Missile Defense Agency
Award Year:
2006
Phase:
Phase II
Agency Tracking Number:
B041-083-1003
Solicitation Topic Code:
MDA04-083
Small Business Information
EPIR TECHNOLOGIES INC
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
068568588
Principal Investigator
 Jerome Crocco
 Engineer
 (630) 771-0203
 jcrocco@epir.com
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0206
Email: siva@epir.com
Research Institution
N/A
Abstract
EPIR Technologies demonstrated in Phase I of this project the ability to polish small GaSb wafers to an epi-ready state. Surfaces smoother than those of typical wafers sold by the best supplier of GaSb substrates for SL growth were obtained. In Phase II, we propose to build upon the experience gained in Phase I to establish a more automated polishing procedure to consistently obtain even smoother GaSb surfaces on large 50 mm diameter wafers. We also will obtain virtually flat substrate surfaces and expect to be able to maintain the ideal 1:1 surface stoichiometry desired for MBE growth. Using a variety of nondestructive characterization tools, the surface chemistry associated with different chemical polishing agents and etchants will be intensively investigated in order to further optimize our successful proprietary chemical polishing protocols developed during the Phase I program. As the final and most important test of the quality of the polished surfaces, both InGaSb/InAs superlattices and devices built on them will be grown and extensively characterized.

* information listed above is at the time of submission.

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