High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$119,925.00
Award Year:
2005
Program:
SBIR
Phase:
Phase I
Contract:
W15P7T-05-C-H201
Agency Tracking Number:
A043-119-1869
Solicitation Year:
2004
Solicitation Topic Code:
A04-119
Solicitation Number:
2004.3
Small Business Information
EPIR TECHNOLOGIES, INC.
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator:
Paul Boieriu
Senior Engineer
(630) 771-0203
pboieriu@epir.com
Business Contact:
Sivalingam Sivananthan
President
(630) 771-0201
siva@epir.com
Research Institution:
n/a
Abstract
It is critical in the field on infrared imaging to reduce array costs and simultaneously improve their performance. We propose to achieve both. The use of long wavelength infrared HgCdTe grown on Si substrates will reduce the array costs, increase its mechanical strength and permit the fabrication of larger area arrays than present-day technology based on bulk CdZnTe substrates. Performance enhancements result from the passivation of defects created by the lattice mismatch between HgCdTe and Si. We will develop a reliable method to passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. The success of this program will be demonstrated by the fabrication of high performance long-wavelength infrared detectors on Si substrates.

* information listed above is at the time of submission.

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