High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

Award Information
Agency: Department of Defense
Branch: Army
Contract: W15P7T-05-C-H201
Agency Tracking Number: A043-119-1869
Amount: $119,925.00
Phase: Phase I
Program: SBIR
Awards Year: 2005
Solicitation Year: 2004
Solicitation Topic Code: A04-119
Solicitation Number: 2004.3
Small Business Information
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
DUNS: 068568588
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Paul Boieriu
 Senior Engineer
 (630) 771-0203
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0201
Email: siva@epir.com
Research Institution
It is critical in the field on infrared imaging to reduce array costs and simultaneously improve their performance. We propose to achieve both. The use of long wavelength infrared HgCdTe grown on Si substrates will reduce the array costs, increase its mechanical strength and permit the fabrication of larger area arrays than present-day technology based on bulk CdZnTe substrates. Performance enhancements result from the passivation of defects created by the lattice mismatch between HgCdTe and Si. We will develop a reliable method to passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. The success of this program will be demonstrated by the fabrication of high performance long-wavelength infrared detectors on Si substrates.

* information listed above is at the time of submission.

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