Large Format LADAR Receiver Arrays Based on Near Infrared HgCdTe Avalanche Photodiodes

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-05-C-0102
Agency Tracking Number: 044-0106
Amount: $99,989.00
Phase: Phase I
Program: SBIR
Awards Year: 2005
Solicitation Year: 2004
Solicitation Topic Code: MDA04-118
Solicitation Number: 2004.4
Small Business Information
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
DUNS: 068568588
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Silviu Velicu
 Principal Investigator
 (630) 771-0203
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0201
Research Institution
Most seeker systems usually operate at long distances. The return laser signal from the target is not only attenuated by absorption, reflection and scattering by air-borne gas, dust and liquid particles, but also by the emissivity and reflectivity variations of the target surface. High bandwidth detectors with internal gain are required. Avalanche photodetectors (APDs) are best suited for this purpose due to their high gain-bandwidth characteristics. Fortunately, the MCT material can be bandgap engineered to achieve a large asymmetry in the hole to electron ionization coefficient. This in turn leads to high gain-bandwidth MCT APDs with minimal excess noise. Using advanced growth technique like molecular beam epitaxy (MBE), it is possible to tailor heterostructure MCT materials that would exclusively use electron ionization or hole ionization. Recent developments in monitoring techniques like in-situ spectroscopic ellipsometry can lead to high quality MCT heterostructures with optimized interfaces. This, in combination with better nucleation methods and other geometric design considerations, make it now possible to grow very low-defect materials. Consequently, it is now possible to produce shot-noise limited MCT APDs that operate over a wide infrared wavelength range in single element and array formats. We propose to use our extensive experience in HgCdTe growth by molecular beam epitaxy and device processing to fabricate large format near infrared (1064nm) HgCdTe avalanche photodiodes on silicon substrates. They will be incorporated into LADAR receiver modules and integrated with MCT-based MWIR/LWIR thermal imagers.

* Information listed above is at the time of submission. *

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