Thermoelectrically Cooled MWIR Avalanche Photodiodes on Silicon Substrates

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$99,939.00
Award Year:
2005
Program:
STTR
Phase:
Phase I
Contract:
FA9550-04-C-0143
Agency Tracking Number:
F045-021-0160
Solicitation Year:
2004
Solicitation Topic Code:
AF04-T021
Solicitation Number:
n/a
Small Business Information
EPIR TECHNOLOGIES, INC.
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator:
Silviu Velicu
R&D Director
(630) 771-0206
svelicu@epir.com
Business Contact:
Sivalingam Sivananthan
President
(630) 771-0201
siva@epir.com
Research Institution:
UNIV. OF ILLINOIS AT CHICAGO
Eric Gislason
College of Engineering , 1020 SEO, 851 S. Morgan St.
Chicago, IL, 60607
(312) 996-3423
Nonprofit college or university
Abstract
Modern Air Force weapon systems need to detect, recognize and track a variety of targets under a wide spectrum of atmospheric conditions. Recent technology developments are paving the way toward imaging optical radars with wavelengths in MWIR range for these applications. The best suited detectors for optical radars are the avalanche photodiodes (APDs) due to their high gain-bandwidth characteristics. Robust silicon-APDs are limited to visible and near infrared region, while InGaAs works well up to wavelengths of about 1.5 microns. Longer wavelength source-detector systems are required to overcome the practical and seasonal conditions of the atmosphere. The semiconductor alloy HgCdTe, with its wavelength tunability over a broad spectral range, high quantum efficiency, low dielectric constant permitting high speed operation, and low noise performance in APDs (due to the resonant enhancement of the ionization coefficient), is an attractive material for MWIR APDs. We propose to use our extensive experience in HgCdTe growth by molecular beam epitaxy (MBE) and device processing to fabricate thermoelectrically cooled MWIR avalanche photodiodes on silicon substrates as single elements and focal plane arrays. The proposing team EPIR Technology- University of Illinois at Chicago integrates the technical strength and extensive knowledge of reputed and accomplished scientists in MBE HgCdTe growth, devices and APD technology.

* information listed above is at the time of submission.

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