Active Pixel HgCdTe Detectors With Built-in Dark Current Reduction for Near-Room Temperature Operation

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNL05AB06P
Agency Tracking Number: 040299
Amount: $69,902.00
Phase: Phase I
Program: SBIR
Awards Year: 2005
Solicitation Year: 2004
Solicitation Topic Code: S1.03
Solicitation Number: N/A
Small Business Information
EPIR Technologies
590 Territorial Dr., Bolingbrook, IL, 60440-4881
DUNS: 068568558
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Silviu Velicu
 Principal Investigator
 (630) 771-0206
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0201
Research Institution
High sensitivity HgCdTe infrared arrays operating at 77K can now be tailored in a wide range of wavelengths from 1 to14 um. However, the cooling requirements make them bulky and unsuitable to be incorporated into robust autonomous sensor systems. We propose to develop detectors with high detectivity that operates at or near room temperature in the MWIR (3 to 5 um) and LWIR (8 to 12 um) atmospheric windows. These detectors are based on the active regions with HgCdTe bulk alloy layer and a secondary HgCdTe bulk alloy layer, which serves as a sink for both the dark and background currents. Room temperature or moderately cooled operation of these detectors is achieved by suppressing the Auger and radiative recombination mechanisms. We will also incorporate in each pixel a dynamic skimming that will reduce the effect of dark and background currents while enhancing the dynamic range. Therefore, we are designing detectors that are read out integrated circuit (ROIC) friendly. We plan to achieve these objectives by combining the advantages of the molecular beam epitaxy (MBE) crystal growth technique, an innovative nonequilibrium device architecture, photon recycling concepts, dynamic dark current skimming, and optimized read out circuit that will increase the operating temperature. High quality HgCdTe layers (for infrared detection) will be grown on large area (3-5") silicon substrates. This will make it possible to produce rugged, low-cost, large area focal plane arrays with higher operating temperatures and near-BLIP performance

* information listed above is at the time of submission.

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