Nanostructures for dislocation blocking in infrared detectors

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$99,999.00
Award Year:
2007
Program:
STTR
Phase:
Phase I
Contract:
W911NF-07-C-0083
Award Id:
83227
Agency Tracking Number:
A074-006-0026
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator:
RamanaBommena
Engineer
(630) 771-0203
rbommena@epir.com
Business Contact:
ChristophGrein
Vice President
(630) 771-0203
grein@epir.com
Research Institute:
UNIV. OF ILLINOIS AT CHICAGO
Sivalingam Sivanantha
845 West Taylor Street
Chicago, IL, 60607 7059
(312) 996-5092
Nonprofit college or university
Abstract
HgCdTe is the material of choice for the fabrication of high performance infrared focal plane arrays. HgCdTe is usually grown on CdZnTe substrates, which suffer from cost and size limitations. Silicon substrates do not have these constraints. Although device-quality HgCdTe cannot be grown directly on silicon, a CdTe buffer layer allows its growth. However, large lattice and thermal mismatches between CdTe and silicon lead to a high density of dislocations. These mismatches are clearly impeding advances in HgCdTe focal plane array technology. To mitigate these issues, we propose a novel approach to fabricate nanostructured CdTe buffer layers on silicon substrates and achieve the selective epitaxy of CdTe followed by epitaxial lateral overgrowth. Novel defect reduction mechanisms are available when the substrate pattern dimensions are reduced to the nanoscale. In the proposed Phase I program, we will explore the feasibility of dislocation reduction with nanopatterned CdTe/Si buffer layers. We will also perform MBE growth on nanopatterned silicon on insulator substrates to compare the defect formation mechanisms on both substrate types. The ultimate goal of this project is to produce LWIR HgCdTe/CdTe/Si layers that rival the quality of HgCdTe/CdZnTe ones without the cost and size drawbacks associated with the use of CdZnTe.

* information listed above is at the time of submission.

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