Ultra-Low-Noise Infrared Detector Amplifier for Next Generation Standoff Detector

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$99,997.00
Award Year:
2008
Program:
STTR
Phase:
Phase I
Contract:
W911NF-08-C-0110
Award Id:
85044
Agency Tracking Number:
A08A-017-0430
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator:
Hari Vemuri
Engineer
(630) 771-0203
vhaditya@epir.com
Business Contact:
Sivalingam Sivananthan
President
(630) 771-0201
ssivananthan@epir.com
Research Institute:
ILLINOIS INSTITUTE OF TECHNOLOGY
Yang Xu
3301 South Dearborn St.
Chicago, IL, 60616
(312) 567-8813
Nonprofit college or university
Abstract
An ultra-low noise integrated circuit for mercury cadmium telluride (HgCdTe) infrared detectors is proposed. Noise reduction techniques such as active noise cancellation are commercially successful and have been implemented using silicon-based integrated circuits to reduce background and externally-induced noise. While silicon dominates infrared sensor readout electronics, silicon-based circuits have a limited bandwidth due to low electron mobility. Compound semiconductor-based amplifiers circuits, employing transistors like the pseudomorhic high electron mobility transistors (pHEMTs), have lower noise figures than conventional silicon-based circuits. They are also faster due to the higher electron mobility and have greater efficiency.. However, circuits employing active noise cancellation have not been implemented using compound semiconductor transistors. This project involves the design, fabrication, packaging and testing of a GaAs-based low noise read-out integrated circuit for HgCdTe infrared detectors employing active noise control. The circuit will have a noise figure less than 1 dB and a bandwidth of at least 10 GHz.

* information listed above is at the time of submission.

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