Ultra-Low-Noise Infrared Detector Amplifier for Next Generation Standoff Detector

Award Information
Agency:
Department of Defense
Branch:
Army
Amount:
$99,997.00
Award Year:
2008
Program:
STTR
Phase:
Phase I
Contract:
W911NF-08-C-0110
Agency Tracking Number:
A08A-017-0430
Solicitation Year:
2008
Solicitation Topic Code:
A08-T017
Solicitation Number:
2008.A
Small Business Information
EPIR TECHNOLOGIES, INC.
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator
 Hari Vemuri
 Engineer
 (630) 771-0203
 vhaditya@epir.com
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0201
Email: ssivananthan@epir.com
Research Institution
 ILLINOIS INSTITUTE OF TECHNOLOGY
 Yang Xu
 3301 South Dearborn St.
Chicago, IL, 60616
 (312) 567-8813
 Nonprofit college or university
Abstract
An ultra-low noise integrated circuit for mercury cadmium telluride (HgCdTe) infrared detectors is proposed. Noise reduction techniques such as active noise cancellation are commercially successful and have been implemented using silicon-based integrated circuits to reduce background and externally-induced noise. While silicon dominates infrared sensor readout electronics, silicon-based circuits have a limited bandwidth due to low electron mobility. Compound semiconductor-based amplifiers circuits, employing transistors like the pseudomorhic high electron mobility transistors (pHEMTs), have lower noise figures than conventional silicon-based circuits. They are also faster due to the higher electron mobility and have greater efficiency.. However, circuits employing active noise cancellation have not been implemented using compound semiconductor transistors. This project involves the design, fabrication, packaging and testing of a GaAs-based low noise read-out integrated circuit for HgCdTe infrared detectors employing active noise control. The circuit will have a noise figure less than 1 dB and a bandwidth of at least 10 GHz.

* information listed above is at the time of submission.

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